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Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions

Published online by Cambridge University Press:  31 January 2011

Rafael Martínez-Martínez
Affiliation:
Instituto de Física y Matemáticas, Universidad Tecnológica de la Mixteca, Huajuapan de León, Oaxaca 69000, México
Enrique Álvarez
Affiliation:
Departamento de Física, Universidad de Sonora (UNISON), Hermosillo, Sonora 83000, México
Adolfo Speghini
Affiliation:
DiSTeMeV, Università di Verona, and INSTM, UdR Verona, I-37029 San Floriano, Verona, Italy
Ciro Falcony
Affiliation:
Centro de Investigación y de Estudio Avanzados del IPN, Departamento de Física, 07000 México, D.F., México
Ulises Caldiño*
Affiliation:
Departamento de Física, Universidad Autónoma Metropolitana-Iztapalapa, 09340 México, D.F., México
*
a)Address all correspondence to this author. e-mail: cald@xanum.uam.mx
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Abstract

Hafnium oxide films doubly doped with CeCl3 and TbCl3 and triply doped with CeCl3, TbCl3, and MnCl2 were deposited at 300 °C with the ultrasonic spray pyrolysis technique. The green and yellow emissions of Tb3+ ions and the yellow-red emission of Mn2+ ions can be generated upon ultraviolet (UV) excitation via a nonradiative energy transfer from Ce3+ to Tb3+ and Ce3+ to Mn2+. In the doubly doped film Ce3+ → Tb3+ energy transfer via an electric dipole–quadrupole interaction appears to be the most probable transfer mechanism; the efficiency of this transfer is about 81% upon excitation at 270 nm. In the HfO2 films activated with Ce3+, Tb3+, and Mn2+ the efficiency of energy transfer from Ce3+ to Tb3+ and Mn2+ ions is enhanced by increasing the Mn2+ concentration, up to about 76% for the film with the highest manganese content (1.6 at.%). In addition, it is demonstrated that these triply doped films can generate cold white light emission upon excitation at 270 nm (peak emission wave length of an AlGaN/GaN-based LEDs).

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Articles
Copyright
Copyright © Materials Research Society 2010

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