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Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films

Published online by Cambridge University Press:  31 January 2011

W. D. Nix  and
B. M. Clemens
W. D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305–2205
B. M. Clemens
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305–2205
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Abstract

We examined the stress associated with crystallite coalescence during the initial stages of growth in thin polycrystalline films with island growth morphology. As growing crystallites contacted each other at their bases, the side-walls zipped together until a balance was reached between the energy associated with eliminating surface area, creating a grain boundary and straining the film. Our estimate for the resulting strain depends only on interfacial free energies, elastic properties, and grain size and predicts large tensile stresses in agreement with experimental results. We also discuss possible stress relaxation mechanisms that can occur during film growth subsequent to the coalescence event.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 8 , August 1999 , pp. 3467 - 3473
Copyright
Copyright © Materials Research Society 1999

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