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Crystallization kinetics of Si3N4 in Si–B–C–N polymer-derived ceramics

Published online by Cambridge University Press:  31 January 2011

Amir H. Tavakoli*
Affiliation:
Institute for Materials Science, University of Stuttgart and Max Planck Institute for Metals Research, D-70569 Stuttgart, Germany
Peter Gerstel
Affiliation:
Institute for Materials Science, University of Stuttgart and Max Planck Institute for Metals Research, D-70569 Stuttgart, Germany
Jerzy A. Golczewski
Affiliation:
Institute for Materials Science, University of Stuttgart and Max Planck Institute for Metals Research, D-70569 Stuttgart, Germany
Joachim Bill
Affiliation:
Institute for Materials Science, University of Stuttgart and Max Planck Institute for Metals Research, D-70569 Stuttgart, Germany
*
a)Address all correspondence to this author. e-mail:a.h.tavakoli@mf.mpg.de
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Abstract

To study the crystallization kinetics of β-Si3N4 in Si–B–C–N polymer-derived ceramics, the amorphous ceramics with composition SiC1.6N1.0B0.4 were synthesized and then isothermally annealed at 1700, 1775 and 1850 °C. The integrated intensities of β-Si3N4 x-ray diffraction (XRD) patterns were used to examine the course of crystallization. The average size of the Si3N4 nanocrystallites was analyzed by means of the XRD measurements and energy-filtering transmission electron microscopy. It was realized that the nanocrystallite dimensions change insignificantly within the time period of crystallization; however, they depend significantly on the temperature. Subsequently, the kinetics of the β-Si3N4 crystallization was analyzed. Consequently, large activation energy in the range of 11.5 eV was estimated. Moreover, continuous nucleation and diffusion-controlled growth have been concluded as the main mechanisms of the crystallization process. Further analysis points at the crucial role of the nucleation rate in the crystallization kinetics of β-Si3N4.

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Articles
Copyright
Copyright © Materials Research Society 2010

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