Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-28T16:24:38.767Z Has data issue: false hasContentIssue false
  • English
  • Français

Cubic phase stabilization and improved dielectric properties of atomic-layer-deposited EryHf1-yOx thin films

Published online by Cambridge University Press:  31 January 2011

K.B. Jinesh ,
Y. Lamy ,
E. Tois ,
R. Forti ,
M. Kaiser ,
F. Bakker ,
H.J. Wondergem ,
W.F.A. Besling  and
F. Roozeboom
K.B. Jinesh*
Affiliation:
NXP Semiconductor Research, High-Tech Campus 4, 5656 AE, Eindhoven, The Netherlands; and Holst Centre (IMEC), 5605 KN Eindhoven, The Netherlands
Y. Lamy
Affiliation:
NXP Semiconductor Research, High-Tech Campus 4, 5656 AE, Eindhoven, The Netherlands; and CEA-LETI, Grenoble 38054, France
E. Tois
Affiliation:
ASM Microchemistry Ltd., Väinö Auerin Katu 12 A, FIN-00560 Helsinki, Finland
R. Forti
Affiliation:
NXP Semiconductor Research, High-Tech Campus 4, 5656 AE, Eindhoven, The Netherlands
H.J. Wondergem
Affiliation:
Philips–MiPlaza Material Analysis, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands
W.F.A. Besling
Affiliation:
NXP Semiconductor Research, High-Tech Campus 4, 5656 AE, Eindhoven, The Netherlands
F. Roozeboom
Affiliation:
NXP Semiconductor Research, High-Tech Campus 4, 5656 AE, Eindhoven, The Netherlands; and Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
*
a)Address all correspondence to this author. e-mail: jinesh.kochupurackal@imec-nl.nl
Get access

Abstract

The electrical and physical properties of atomic-layer-deposited EryHf1-yOx thin films have been investigated with different stoichiometries of erbium oxide (Er2O3) and hafnium oxide (HfO2). The as-deposited and annealed EryHf1-yOx films exhibit much higher dielectric constants than the reported k-values of the corresponding binary oxides. The highest k-value of 37.6 ± 1 is achieved with 13 at.% of erbium in the film. The enhancement in dielectric constant is due to the formation of the cubic HfO2 phase stabilized by erbium, as revealed by x-ray diffraction experiments. The annealed mixed oxide films exhibit remarkably low oxide charges, low interface states, low leakage, and good breakdown electric fields.

Keywords

DielectricAtomic layer depositionElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 8: Materials for Electrical Energy Storage , August 2010 , pp. 1629 - 1635
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Govindarajan, S., Böscke, T.S., Sivasubramani, P., Kirsch, P.D., Lee, B.H., Tseng, H-H., Jammy, R., Schröder, U., Ramanathan, S., Gnade, B.E.Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices. Appl. Phys. Lett. 91, 62906 (2007)CrossRefGoogle Scholar
2.Adelmann, C., Sriramkumar, V., Van Elshocht, S., Lehnen, P., Conard, T., De Gendt, S.Dielectric properties of dysprosium-and scandium-doped hafnium dioxide thin films. Appl. Phys. Lett. 91, 162902 (2007)CrossRefGoogle Scholar
3.Rauwel, E., Dubourdieu, C., Holländer, B., Rochat, N., Ducroquet, F., Rossell, M.D., Van Tendeloo, G., Pelissier, B.Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition. Appl. Phys. Lett. 89, 012902 (2006)CrossRefGoogle Scholar
4.He, W., Zhang, L., Chan, D.S.H., Cho, B.J.Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant. IEEE Electron Device Lett. 30, 623 (2009)CrossRefGoogle Scholar
5.Jinesh, K.B., Klootwijk, J.H., Lamy, Y., Wolters, R.A.M., Tois, E., Tuominen, M., Roozeboom, F., Besling, W.F.A.Enhanced electrical properties of atomic layer deposited La2O3 thin films with embedded ZrO2 nanocrystals. Appl. Phys. Lett. 93, 172904 (2008)CrossRefGoogle Scholar
6.Tsoutsou, D., Lamagna, L., Volkos, S.N., Molle, A., Baldovino, S., Schamm, S., Coulon, P.E., Fanciulli, M.Atomic layer deposition of LaxZr1–xO2–δ (x = 0.25) high-k dielectrics for advanced gate stacks. Appl. Phys. Lett. 94, 053504 (2009)CrossRefGoogle Scholar
7.Losurdo, M., Giangregorio, M.M., Bruno, G., Yang, D., Irene, E.A., Suvorova, A.A., Saunders, M.Er2O3 as a high-k dielectric candidate. Appl. Phys. Lett. 91, 091914 (2007)CrossRefGoogle Scholar
8.Jinesh, K.B., Lamy, Y., Tois, E., Besling, W.F.A.Charge conduction mechanisms of atomic-layer-deposited Er2O3 thin films. Appl. Phys. Lett. 94, 252906 (2009)CrossRefGoogle Scholar
9.Ono, H., Katsumata, T.Interfacial reactions between thin rare-earth-metal oxide films and Si substrates. Appl. Phys. Lett. 78, 1832 (2001)CrossRefGoogle Scholar
10.Wu, L., Yu, H.Y., Pey, K.L., Pan, J.S., Tuominen, M., Tois, E., Lee, D.Y., Hsu, K.Y., Huang, K.T., Tao, H.J., Mii, Y.J.Electrical and physical properties of Er-doped HfO2 high-k dielectrics prepared by atomic layer deposition. Electrochem. Solid-State Lett. 13, G21 (2010)CrossRefGoogle Scholar
11.Chen, J.D., Wang, X.P., Li, M-F., Lee, S.J., Yu, M.B., Shen, C., Yeo, Y-C.NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric. IEEE Electron Device Lett. 28, 862 (2007)CrossRefGoogle Scholar
12.Cho, M-H., Roh, Y.S., Whang, C.N., Jeong, K., Nahm, S.W., Ko, D-H., Lee, J.H., Lee, N.I., Fujihara, K.Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition. Appl. Phys. Lett. 81, 472 (2002)CrossRefGoogle Scholar
13.Schroder, D.K.Semiconductor Material and Device Characterization 3rd ed (Wiley-Interscience, New York 2006)Google Scholar
14.Zhu, Y.Y., Fang, Z.B., Chen, S., Liao, C., Wu, Y.Q., Fan, Y.L., Jiang, Z.M.Fowler-Nordheim hole tunneling in metal-Er2O3-silicon structures. Appl. Phys. Lett. 91, 122914 (2007)CrossRefGoogle Scholar
15.Pitcher, M.W., Ushakov, S.V., Navrotsky, A., Woodfield, B.F., Li, G., Boerio-Goates, J., Tissue, B.M.Energy crossovers in nanocrystalline zirconia. J. Am. Ceram. Soc. 88, 160 (2005)CrossRefGoogle Scholar
16.Wang, C., Zinkevich, M., Aldinger, F.The zirconia-hafnia system: DTA measurements and thermodynamic calculations. J. Am. Ceram. Soc. 89, 3751 (2006)CrossRefGoogle Scholar
17.Navrotsky, A.Thermochemical insights into refractory ceramic materials based on oxides with large tetravalent cations. J. Mater. Chem. 15, 1883 (2005)CrossRefGoogle Scholar
18.Zhao, X., Vanderbilt, D.Phonons and lattice dielectric properties of zirconia. Phys. Rev. B 65, 075105 (2002)CrossRefGoogle Scholar
19.Fischer, D., Kersch, A.Stabilization of the high-k tetragonal phase in HfO2: The influence of dopants and temperature from ab initio simulations. J. Appl. Phys. 104, 084104 (2008)CrossRefGoogle Scholar
20.Tomida, K., Kita, K., Toriumi, A.Dielectric constant enhancement due to Si incorporation into HfO2. Appl. Phys. Lett. 89, 142902 (2006)CrossRefGoogle Scholar