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Current-induced growth of P-rich phase at electroless nickel/Sn interface

Published online by Cambridge University Press:  23 February 2011

Qiliang Yang ,
Panju Shang ,
Jing D. Guo ,
Zhiquan Liu  and
Jian-Ku Shang
Zhiquan Liu
Affiliation:
Shenyang National Laboratory for Materials Science Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Jian-Ku Shang*
Affiliation:
Shenyang National Laboratory for Materials Science Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China; and Department of Materials Science and Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
*
a) Address all correspondence to this author. e-mail: jkshang@uiuc.edu
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Abstract

The role of high current stressing during growth of the P-rich phase at the electroless Ni/Sn interface was examined by transmission electron microscopy. Prior to current stressing, two layers of Ni12P5, columnar Ni12P5 and noncolumnar Ni12P5, were formed after soldering. Upon electric stressing, the two layers of P-rich phase showed opposite growth patterns at the two opposing electrode interfaces. At the cathode, columnar growth of the P-rich phase was greatly enhanced while growth of the noncolumnar layer was inhibited. By contrast, the opposite was found at the anode where the current stressing promoted the noncolumnar growth but suppressed the growth of the columnar layer. Such a strong polarity effect resulted from directional electromigration of the key reaction species, nickel, to and from the interfacial reaction fronts. As a result of the difference in reaction mechanism, overall growth of the P-rich phase was much faster at the cathode during current stressing.

Keywords

NiPackagingSn
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 9 , September 2009 , pp. 2767 - 2774
Copyright
Copyright © Materials Research Society 2009

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References

1Alam, M.O., Chan, Y.C. and Tu, K.N.: Effect of reaction time and P content on mechanical strength of the interface formed between eutectic Sn–Ag solder and Au electroless Ni–P Cu bond pad. J. Appl. Phys. 94, 4108 (2003)CrossRefGoogle Scholar
2Alam, M.O., Chan, Y.C. and Hung, K.C.: Reliability study of the electroless Ni–P layer against solder alloy. Microelectron. Reliab. 42, 1065 (2002)Google Scholar
3Jang, J.W., Frear, D.R., Lee, T.Y. and Tu, K.N.: Morphology of interfacial reaction between lead-free solders and electroless Ni–P under bump metallization. J. Appl. Phys. 88, 6359 (2000)CrossRefGoogle Scholar
4Lee, C.Y. and Lin, K.L.: The interaction kinetics and compound formation between electroless Ni–P and solder. Thin Solid Films 249, 201 (1994)CrossRefGoogle Scholar
5Wang, S.J. and Liu, C.Y.: Retarding growth of Ni3P crystalline layer in Ni(P) substrate by reacting with Cu-bearing Sn(Cu) solders. Scr. Mater. 49, 813 (2003)Google Scholar
6Kumar, A., He, M. and Chen, Z.: Barrier properties of thin Au/Ni– P under bump metallization for Sn–3.5Ag solder. Surf. Coat. Technol. 198, 283 (2005)CrossRefGoogle Scholar
7Kumar, A., Chen, Z., Mhaisalkar, S.G., Wong, C.C., Teo, P.S. and Kripesh, V.: Effect of Ni–P thickness on solid-state interfacial reactions between Sn–3.5Ag solder and electroless Ni–P metallization on Cu substrate. Thin Solid Films 504, 410 (2006)Google Scholar
8He, M., Chen, Z., Qi, G.J., Wong, C.C. and Mhaisalkar, S.G.: Effect of post-reflow cooling rate on intermetallic compound formation between Sn–3.5 Ag solder and Ni–P under bump metallization. Thin Solid Films 462–463, 363 (2004)Google Scholar
9Yoon, J.W. and Jung, S.B.: Growth kinetics of Ni3Sn4 and Ni3P layer between Sn–3.5Ag solder and electroless Ni–P substrate. J. Alloys Compd. 376, 105 (2004)CrossRefGoogle Scholar
10Sun, P., Andersson, C., Wei, X., Cheng, Z., Shangguan, D. and Liu, J.: High temperature aging study of intermetallic compound formation of Sn–3.5Ag and Sn–4.0Ag–0.5Cu solders on electroless Ni(P) metallization. J. Alloys Compd. 425, 191 (2006)CrossRefGoogle Scholar
11Alam, M.O., Chan, Y.C. and Hung, K.C.: Interfacial reaction of Pb–Sn solder and Sn–Ag solder with electroless Ni deposit during reflow. J. Electron. Mater. 31, 1117 (2002)CrossRefGoogle Scholar
12Lin, Y.C. and Duh, J.G.: Optimal phosphorous content selection for the soldering reaction of Ni–P under bump metallization with Sn–Ag–Cu Solder. J. Electron. Mater. 35, 1665 (2006)Google Scholar
13Jang, J.W., Kim, P.G., Tu, K.N., Frear, D.R. and Thompson, P.: Solder reaction-assisted crystallization of electroless Ni–P under bump metallization in low cost flip chip technology. J. Appl. Phys. 85, 8456 (1999)CrossRefGoogle Scholar
14He, M., Chen, Z. and Qi, G.J.: Solid state interfacial reaction of Sn–37Pb and Sn–3.5Ag solders with Ni–P under bump metallization. Acta Mater. 52, 2047 (2004)Google Scholar
15Lin, Y.C., Shih, T.Y., Tien, S.K. and Duh, J.G.: Morphological and microstructural evolution of phosphorous-rich layer in SnAgCu/Ni–P UBM solder joint. J. Electron. Mater. 36, 1469 (2007)CrossRefGoogle Scholar
16Lin, Y.C. and Duh, J.G.: Phase transformation of the phosphorus-rich layer in SnAgCu/Ni–P solder joints. Scr. Mater. 54, 1661 (2006)CrossRefGoogle Scholar
17Lin, Y.C., Shih, T.Y., Tien, S.K. and Duh, J.G.: Suppressing Ni–Sn–P growth in SnAgCu/Ni–P solder joints. Scr. Mater. 56, 49 (2007)CrossRefGoogle Scholar
18Li, J.F., Mannan, S.H., Clode, M.P., Chen, K., Whalley, D.C., Liu, C. and Hutt, D.A.: Comparison of interfacial reactions of Ni and Ni–P in extended contact with liquid Sn–Bi-based solders. Acta Mater. 55, 737 (2007)CrossRefGoogle Scholar
19Kang, H.B., Bae, J.H., Lee, J.W., Park, M.H., Yoon, J.W., Jung, S.B. and Yang, C.W.: Characterization of interfacial reaction layers formed between Sn–3.5Ag solder and electroless Ni-immersion Au-plated Cu substrates. J. Electron. Mater. 37, 84 (2008)CrossRefGoogle Scholar
20Jeon, Y.D., Nieland, S., Ostmann, A., Reichl, H. and Paik, K.W.: A study on interfacial reactions between electroless Ni–P under bump metallization and 95.5Sn–4.0Ag–0.5Cu alloy. J. Electron. Mater. 32, 548 (2003)Google Scholar
21Sharif, A. and Chan, Y.C.: Effect of substrate metallization on interfacial reactions and reliability of Sn–Zn–Bi solder joints. Microeletron. Eng. 84, 328 (2007)Google Scholar
22Hsiao, L.Y., Kao, S.T. and Duh, J.G.: Characterizing metallurgical reaction of Sn3.0Ag0.5Cu composite solder by mechanical alloying with electroless Ni–P/Cu under-bump metallization after various reflow cycles. J. Electron. Mater. 35, 81 (2006)CrossRefGoogle Scholar
23Vuorinen, V., Laurila, T., Yu, H. and Kivilahti, J.K.: Phase formation between lead-free Sn–Ag–Cu solder and Ni(P)/Au finishes. J. Appl. Phys. 99, 023530 (2006)Google Scholar
24Chen, K., Liu, C., Whalley, D.C., Hutt, D.A., Li, J.F. and Mannan, S.H.: A comparative study of the interfacial reaction between electroless Ni–P coatings and molten tin. Acta Mater. 56, 5668 (2008)CrossRefGoogle Scholar
25Sun, F., Hochstenbach, P., Van, W.D. Driel, and Zhang, G.Q.: Fracture morphology and mechanism of IMC in low-Ag SAC solder/UBM (Ni(P)–Au) for WLCSP. Microelectron. Reliab. 48, 1167 (2008)CrossRefGoogle Scholar
26Yoon, J.W., Park, J.H., Shur, C.C. and Jung, S.B.: Characteristic evaluation of electroless nickel–phosphorus deposits with different phosphorus contents. Microelectron. Eng. 84, 2552 (2007).Google Scholar
27Chun, H.S., Yoon, J.W. and Jung, S.B.: Solid-state interfacial reactions between Sn–3.5Ag–0.7Cu solder and electroless Ni-immersion Au substrate during high temperature storage test. J. Alloys Compd. 439, 91 (2007)Google Scholar
28Islam, M.N., Chan, Y.C., Sharif, A. and Alam, M.O.: Comparative study of the dissolution kinetics of electrolytic Ni and electroless Ni–P by the molten Sn3.5Ag0.5Cu solder alloy. Microelectron. Reliab. 43, 2031 (2003)Google Scholar
29Yoon, J.W., Kim, S.W. and Jung, S.B.: Effect of reflow time on interfacial reaction and shear strength of Sn–0.7Cu solder/Cu and electroless Ni–P BGA joints. J. Alloys Compd. 385, 192 (2004)CrossRefGoogle Scholar
30Liu, P.L. and Shang, J.K.: Fracture of SnBi/Ni(P) interfaces. J. Mater. Res. 20, 818 (2005)Google Scholar
31Kumar, A. and Chen, Z.: Influence of solid-state interfacial reactions on the tensile strength of Cu/electroless Ni–P/Sn–3.5Ag solder joint. Mater. Sci. Eng., A 423, 175 (2006)Google Scholar
32Liu, P.L., Xu, Z.K. and Shang, J.K.: Thermal stability of electroless-nickel/solder interface: Part B. Interfacial fatigue resistance. Metall. Mater. Trans. A 31, 2867 (2000)Google Scholar
33Kim, D.G., Kim, J.W. and Jung, S.B.: Effect of aging conditions on interfacial reaction and mechanical joint strength between Sn– 3.0Ag–0.5Cu solder and Ni–P UBM. Mater. Sci. Eng., B 121, 204 (2005)Google Scholar
34Lee, H.T., Hu, S.Y., Hong, T.F. and Chen, Y.F.: The shear strength and fracture behavior of Sn–Ag–xSb solder joints with Au/Ni–P/Cu UBM. J. Electron. Mater. 37, 867 (2008)CrossRefGoogle Scholar
35Hung, K.C., Chan, Y.C. and Tang, C.W.: Metallurgical reaction and mechanical strength of electroless Ni–P solder joints for advanced packaging applications. J. Mater. Sci.-Mater. Electron. 11, 587 (2000)Google Scholar
36Chen, Z., Kumar, A. and Mona, M.: Effect of phosphorus content on Cu/Ni–P/Sn–3.5Ag solder joint strength after multiple reflows. J. Electron. Mater. 35, 2126 (2006)Google Scholar
37Yoon, J.W., Chun, H.S. and Jung, S.B.: Correlation between inter-facial reactions and shear strengths of Sn–Ag–(Cu and Bi–In)/ENIG plated Cu solder joints. Mater. Sci. Eng., A 483–484, 731 (2008)Google Scholar
38Kim, D.G., Kim, J.W., Ha, S.S., Noh, B.I., Koo, J.M., Park, D.W., Ko, M.W. and Jung, S.B.: Effect of reflow numbers on the interfacial reaction and shear strength of flip chip solder joints. J. Alloys Compd. 458, 253 (2008)CrossRefGoogle Scholar
39Zhang, L., Wang, Z.G. and Shang, J.K.: Current-induced weakening of Sn3.5Ag0.7Cu Pb-free solder joints. Scr. Mater. 56, 381 (2007)Google Scholar
40Kumar, A., Yang, Y., Wong, C.C., Kripesh, V. and Chen, Z.: Effect of electromigration on the mechanical performance of Sn–3.5Ag solder joints with Ni and Ni–P metallizations. J. Electron. Mater. 38, 78 (2009)Google Scholar
41Ren, F., Nah, J.W., Tu, K.N., Xiong, B.S., Xu, L.H., and J.Pang, H.L.: Electromigration induced ductile-to-brittle transition in lead-free solder joints. Appl. Phys. Lett. 89, 141914 (2006)CrossRefGoogle Scholar
42Kumar, A., He, M., Chen, Z. and Teo, P.S.: Effect of electro-migration on interfacial reactions between electroless Ni–P and Sn–3.5% Ag solder. Thin Solid Films 462–463, 413 (2004)Google Scholar
43Wu, B.Y., Zhong, H.W., Chan, Y.C. and Alam, M.O.: Degradation of Sn37Pb and Sn3.5Ag0.5Cu solder joints between Au/Ni (P)/Cu pads stressed with moderate current density. J. Mater. Sci.-Mater. Electron. 17, 943 (2006)Google Scholar
44Alam, M.O., Wu, B.Y., Chan, Y.C. and Tu, K.N.: High electric current density-induced interfacial reactions in micro ball grid array (mBGA) solder joints. Acta Mater. 54, 613 (2006)Google Scholar
45Lee, T.Y., Tu, K.N. and Frear, D.R.: Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallization. J. Appl. Phys. 90, 4502 (2001)Google Scholar
46Shao, T.L., Chen, Y.H., Chiu, S.H. and Chen, C.: Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr–Cu/Cu and Ni(P)/Au metallization pads. J. Appl. Phys. 96, 4518 (2004)Google Scholar
47Liu, P.L., Xu, Z.K. and Shang, J.K.: Thermal stability of electroless-nickel/solder interface: Part A. Interfacial chemistry and microstructure. Metall. Mater. Trans. A 31, 2857 (2000)Google Scholar
48Yeh, D.C. and Huntington, H.B.: Extreme fast-diffusion system: Nickel in single-crystal tin. Phys. Rev. Lett. 53, 1469 (1984)Google Scholar
49Mei, S., Shi, J. and Huntington, H.B.: Diffusion and electromigration in lead alloys. I. Nickel as a mobile element. J. Appl. Phys. 62, 444 (1987)Google Scholar