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Dependence of the Sn0/2+ charge state on the Fermi level in semi-insulating CdTe

Published online by Cambridge University Press:  31 January 2011

V. Babentsov ,
J. Franc ,
H. Elhadidy ,
A. Fauler ,
M. Fiederle  and
R.B. James
V. Babentsov
Affiliation:
Institute for Semiconductor Physics, Kiev 03028, Ukraine
J. Franc*
Affiliation:
Charles University, Faculty of Mathematics and Physics, Institute of Physics, Prague CZ 121 16, Czech Republic
H. Elhadidy
Affiliation:
Charles University, Faculty of Mathematics and Physics, Institute of Physics, Prague CZ 121 16, Czech Republic
A. Fauler
Affiliation:
Materialforschungszentrum, Freiburg D-79104, Germany
M. Fiederle
Affiliation:
Materialforschungszentrum, Freiburg D-79104, Germany
R.B. James
Affiliation:
Energy, Environment and National Security Directorate, Brookhaven National Laboratory, Upton, New York 11973
*
a)Address all correspondence to this author. e-mail: franc@karlov.mff.cuni.cz
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Abstract

We explored the growth and characteristics of CdTe doped with Sn to heighten our understanding of the role of deep levels on electrical compensation and trapping. We demonstrated, for the first time, the strong dependence of the SnCd charge state on the Fermi-level variation (2–3kT) in high-resistivity CdTe. The concentration of deep traps for electrons was determined by the number of doubly positively charged Sn2+ atoms. Thermoelectric-effect spectroscopy and photovoltage measurements revealed the conversion of the SnCd defect from the electron SnCd2+ trap to the hole SnCd0 trap. The results agree well with the existence of a negative U-center in the SnCd0/2+ defect. We also showed that the neutral Sn defect is responsible for the near midgap C-band → bound hole radiative transitions band with a maximum at 0.76 eV.

Keywords

DefectsPhotovoltaicThermally stimulated current
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 11 , November 2007 , pp. 3249 - 3254
Copyright
Copyright © Materials Research Society 2007

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References

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