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Deposition and Characterization of Diamond-Like Carbon Thin Films by Electro-Deposition Technique Using Organic Liquid

Published online by Cambridge University Press:  03 March 2011

S.C. Ray*
Affiliation:
Department of Physics, Tamkang University, Tamsui 251, Taiwan
B. Bose
Affiliation:
Department of Physics, North-Bengal University, Siliguri 734430, India
J.W. Chiou
Affiliation:
Department of Physics, Tamkang University, Tamsui 251, Taiwan
H.M. Tsai
Affiliation:
Department of Physics, Tamkang University, Tamsui 251, Taiwan
J.C. Jan
Affiliation:
Department of Physics, Tamkang University, Tamsui 251, Taiwan
Krishna Kumar
Affiliation:
Department of Physics, Tamkang University, Tamsui 251, Taiwan
W.F. Pong
Affiliation:
Department of Physics, Tamkang University, Tamsui 251, Taiwan
D. DasGupta
Affiliation:
Department of Physics, North-Bengal University, Siliguri 734430, India
G. Fanchini
Affiliation:
Dipartimento di Fisica & Unità INFM, Politecnico di Torino Torino, Italy
A. Tagliaferro
Affiliation:
Dipartimento di Fisica & Unità INFM, Politecnico di Torino Torino, Italy
*
a)Address all correspondence to this author.
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Abstract

Diamond-like carbon films were synthesized by electro-deposition technique from an organic liquid (a solution of alpha- and beta-pinenes in n-hexane) on silicon substrate at room temperature and at room pressure. The x-ray diffraction (XRD), Fourier-transform infrared (FTIR) spectra, Raman spectra, photoluminescence (PL), and x-ray absorption near edge structure (XANES) spectra analysis were used to study the properties of the diamond-like carbon (as-deposited and annealed) films. The XRD measurement indicated that the film contains some diamond-crystalline phases whereas Raman spectra did not show any prominent diamond-like peak. PL intensity as higher for the as-deposited film and decreased with high-temperature vacuum annealing. FTIR spectra showed the presence of sp3 hybridization C–H bonds and their intensity decreases at higher annealing temperature. C and O K-edge XANES spectra showed that π* (sp2) intensity significantly decreases when the annealing temperature is 600 °C.

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Articles
Copyright
Copyright © Materials Research Society 2004

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References

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