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Dielectric loss of niobium-doped and undoped polycrystalline Sr2Bi4Ti5O18

Published online by Cambridge University Press:  01 April 2005

Wang-ping Lu
Affiliation:
College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
Jun Zhu
Affiliation:
College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
Hui Sun
Affiliation:
College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
Xiao-bing Chen*
Affiliation:
College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, People’s Republic of China; and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, People's Republic of China
*
a) Address all correspondence to this author. e-mail address: xbchen@yzu.edu.cn
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Abstract

Ferroelectric and dielectric properties of niobium-doped Sr2Bi4Ti5O18 ceramics were investigated. Compared with the undoped ceramics, the niobium-doped ceramics exhibited obviously increased remnant polarization 2Pr, which is similar to the case of vanadium doping. However, the mechanisms of increasing of 2Pr by vanadium and niobium doping are quite different. In the case of Nb-doping, one relaxation peak P1 is found on the dielectric loss curves D(T) at 70 °C. The dependence of the peak on various annealing atmosphere indicates that the relaxation mechanism of the peak is related to oxygen vacancies. With niobium doping, the P1 peak declines gradually. These results suggest that the substitution of Ti4+ by a small amount of Nb5+ can result in the decreasing of the concentration of oxygen vacancies. Thus, the increase in 2Pr of Nb-doped Sr2Bi4Ti5O18 could be attributed to the significant weakening of defect pinning.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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