Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-13T05:37:25.616Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion and solubility of holmium ions in barium titanate ceramics

Published online by Cambridge University Press:  01 December 2004

Junichi Itoh ,
Hajime Haneda ,
Shunichi Hishita ,
Isao Sakaguchi ,
Naoki Ohashi ,
Dae-Chul Park  and
Isamu Yashima
Junichi Itoh
Affiliation:
Mitsui Mining & Smelting Co. Ltd., Corp. R&D Center, Saitama 362-0021, Japan; National Institute for Materials Science/Advanced Materials Laboratory, Tsukuba, Ibaraki 305-0044, Japan; and Interdisciplinary Graduate School of Engineering Sciences, Kyushu University,Fukuoka 816-8580, Japan
Hajime Haneda*
Affiliation:
National Institute for Materials Science/Advanced Materials Laboratory, Tsukuba, Ibaraki 305-0044, Japan; and Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8560, Japan
Shunichi Hishita
Affiliation:
National Institute for Materials Science/Advanced Materials Laboratory, Tsukuba, Ibaraki 305-0044, Japan
Isao Sakaguchi
Affiliation:
National Institute for Materials Science/Advanced Materials Laboratory, Tsukuba, Ibaraki 305-0044, Japan
Naoki Ohashi
Affiliation:
National Institute for Materials Science/Advanced Materials Laboratory, Tsukuba, Ibaraki 305-0044, Japan
Dae-Chul Park
Affiliation:
National Institute for Materials Science/Advanced Materials Laboratory, Tsukuba, Ibaraki 305-0044, Japan
Isamu Yashima
Affiliation:
Mitsui Mining & Smelting Co. Ltd., Corp. R&D Center, Saitama 362-0021, Japan
*
a) Address all correspondence to this author. e-mail: haneda.hajime@nims.go.jp
Get access

Abstract

Ho ion solubility and diffusivity were evaluated in barium titanate ceramics in which Ho ions were implanted with an accelerating voltage of 500 keV. The depth profile of the ions was composed of three regions in the post-annealed sample: the first was the precipitation region, the second was a region created by lattice diffusion of Ho ions, and the third was a region created by grain-boundary diffusion. The Ho lattice diffusion characteristics were similar to those of Ni ion diffusion in barium titanate ceramics, and we concluded that the diffusion mechanism was the same as that responsible for Ni ions. The Ho ions diffused through the B-site (Ti-site) and were then exchanged with A-site ions. This mechanism suggests that a small number of Ho ions dissolved in the B-site. Preferential grain-boundary diffusion was also observed. The grain-boundary diffusion coefficients were four to five orders of magnitude larger than the volume diffusion coefficients. The solubility of Ho ions was estimated to be a few thousand parts per million in barium titanate ceramics.

Keywords

CeramicDiffusionSecondary ion mass spectroscopy (SIMS)
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 12 , December 2004 , pp. 3512 - 3520
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Sakabe, Y. and Murata, M.: Ceramic capacitor. Denki Kagaku oyobi Kogyo Butsuri Kagaku, 58, 800 1990 (In Japanese)Google Scholar
2Kishi, H., Mizuno, Y. and Chazono, H.: Base-metal electrode-multilayer ceramic capacitors: Past, present and future perspectives. Jpn. J. Appl. Phys. 42, 1 (2003).CrossRefGoogle Scholar
3Saito, H., Chazono, H., Kishi, H. and Yamaoka, N.: X7R multilayer ceramic capacitors with nickel electrodes. Jpn. J. Appl. Phys. 30, 2307 (1991).CrossRefGoogle Scholar
4Itoh, J., Yashima, I., Ohashi, N., Sakaguchi, I., Haneda, H. and Tanaka, J.: Ni ion diffusion in barium titanate perovskite. J. Ceram. Soc. Jpn. 109, 955 (2001).CrossRefGoogle Scholar
5Herbert, J.M.: High-permittivity ceramics sintered in hydrogen. Trans. Br. Ceram. Soc. 62, 645 (1963).Google Scholar
6Burn, I. and Maher, G.J.: High resistivity BaTiO3 ceramics sintered in CO-CO2 atmospheres. J. Mater. Sci. 10, 633 (1975).CrossRefGoogle Scholar
7Sakabe, Y., Minai, K. and Wakino, K.: High-dielectric constant for base metal monolothic capacitor. Jpn. J. Appl. Phys. Suppl. 20, 147 (1981).CrossRefGoogle Scholar
8Sumita, S., Ikeda, M., Nakano, Y., Nishiyama, K. and Nomura, T.: Degradation of multilayer ceramic capacitors with nickel electrodes. J. Am. Ceram. Soc. 74, 2739 (1991).CrossRefGoogle Scholar
9Shizuno, H., Kusumi, S., Saito, H. and Kishi, H.: Properties of Y5V multilayer ceramic capacitors with nickel electrodes. Jpn. J. Appl. Phys. 32, 4380 (1993).CrossRefGoogle Scholar
10Guerrero, E., Potzl, H., Stingeder, G., Grasserbauer, M., Piplitz, K. and Chu, W.K.: Annealing of high-dose Sb-implanted single-crystal silicon. J. Electrochem. Soc. 132, 3048 (1985).CrossRefGoogle Scholar
11Komatsu, M., Ohashi, N., Sakaguchi, I., Hishita, S. and Haneda, H.: Ga, N solubility limit in co-implanted ZnO measured by secondary ion mass spectrometry. Appl. Surf. Sci. 189, 349 (2002).CrossRefGoogle Scholar
12Kishi, H., Okino, Y., Honda, M., Iguchi, Y., Imaeda, M., Takahashi, Y., Ohsato, H. and Okuda, T.: The effect of MgO and rare-earth oxide on formation behavior of core-shell structure in BaTiO3. Jpn. J. Appl. Phys. 36, 5954 (1997).CrossRefGoogle Scholar
13Itoh, J., Park, D.C., Ohashi, N., Sakaguchi, I., Yashima, I., Haneda, H. and Tanaka, J.: Oxygen defects related to electrical properties of La-doped BaTiO3. Jpn. J. Appl. Phys. 41, 3798 (2002).CrossRefGoogle Scholar
14Hishita, S., Haneda, H., Kim, S.S. and Moon, J.H.: Recrystallization of ion-beam amorphized BSCC thin films. Nucl. Instrum. Meth. B 206, 171 (2003).CrossRefGoogle Scholar
15Haneda, H., Sakaguchi, I., Watanabe, A., Ishigaki, T. and Tanaka, J.: Oxygen diffusion in single- and poly-crystalline zinc oxides. J. Electroceram. 4, 41 (1999).CrossRefGoogle Scholar
16 JCPDS Card No. 5-0626. International Center for Diffraction Data: Newton Square, PA.Google Scholar
17Toujou, F., Tomita, M., Takano, A., Okamoto, Y., Hayashi, S., Yamamoto, A., and Homma, Y.: SIMS round-robin study of depth profiling of boron implantation in silicon[II]-Problem of quantification in high concentration B profiles, in SIMS XII, edited by Benninghoven, A., Bertrand, P., Migeon, H.N., and Werner, H.W. (Elsevier, Amsterdam, The Netherlands, 2000), pp. 101–104.Google Scholar
18Barcz, A., Zielinski, M., Nossazewska, E. and Lindstorem, G.: Extremely deep SIMS profiling: Oxygen in FZ silicon. Appl. Surf. Sci. 203, 396 (2003).CrossRefGoogle Scholar
19The stopping and range of ions in solids. Ziegler, J.F., Biersack, J.P., and Littmark, U., (Pergamon Press, Inc., New York, 1985) p. 109.Google Scholar
20Hofmann, S.: Atomic mixing, surface-roughness and information depth in high-resolution AES depth profiling of a GaAs/AlAs superlattice structure. Surf. Interf. Anal. 21, 673 (1994).CrossRefGoogle Scholar
21Mayer, J.W. Application to semiconductor technology, in Channeling, edited by Morgan, D.V. (John Wiley & Sons, London, U.K., 1973), pp. 453–471Google Scholar
22Namba, S., Masuda, K., Gamo, K. and Doi, A. Enhanced diffusion in ion implanted silicon, in Ion Implantation, edited by Eisen, F.H. and Chadderton, L.T. (Gordon and Breach Science Publishers, London, U.K., 1971), pp. 231–236Google Scholar
23Linnarsson, M.K., Zimmermann, U., Wong-Leung, J., Shöner, A., Janson, M.S., Jagadish, C. and Svensson, B.G.: Solubility limits of dopants in 4H-SiC. Appl. Surf. Sci. 203, 427 (2003).CrossRefGoogle Scholar
24Kingery, W.D., Bowen, H.K. and Uhlmann, D.R. Microstructure of ceramics, in Introduction to Ceramics, 2nd ed. (John Wiley & Sons, New York, NY, 1976), pp. 516–523Google Scholar
25Dean, J.A. Inorganic Chemistry, in Lange’s Handbook of Chemistry, 15th ed. (McGraw-Hill, New York, NY, 1999), pp. 3.13–3.60Google Scholar
26Lopato, L.M., Shechenko, A.V., Kushevskii, A.E. and Tresvyatskii, S.G.: Inorg. Mater. (USSR, English Transl.) 10, 1276 (1974).Google Scholar
27Crank, J.: The Mathematics of Diffusion, (Oxford Academic Press, London, U.K., 1955), p. 30Google Scholar
28Claire, A.D. Le: The analysis of grain boundary diffusion measurements. Brit. J. Appl. Phys. 14, 351 (1963).CrossRefGoogle Scholar
29Chung, Y-C. and Wuensch, B.J.: An improved method, based on Whipple’s exact solution, for obtaining accurate grain-boundary diffusion coefficients from shallow solute concentration gradients. J. Appl. Phys. 79, 8323 (1996).CrossRefGoogle Scholar
30Shannon, R.D.: Crystal physics, diffraction, theoretical and general crystallography. Acta Crystallogr. A 32, 751 (1976).CrossRefGoogle Scholar
31Tsur, Y., Hitomi, A., Scrymgeour, I. and Randall, C.A.: Site occupancy of rare-earth cations in BaTiO3. Jpn. J. Appl. Phys. 40, 255 (2001).CrossRefGoogle Scholar
32Kirianov, A., Hagiwara, T., Kishi, H. and Ohsato, H.: Effect of Ho/Mg ratio on formation of core-shell structure in BaTiO3 and on dielectric properties of BaTiO3 ceramics. Jpn. J. Appl. Phys. 41, 6934 (2002).CrossRefGoogle Scholar
33Atkinson, A. and Taylor, R.I.: The diffusion of Ni-63 along grain-boundaries in nickel-oxide. Philos. Mag. A 43, 979 (1981).CrossRefGoogle Scholar
34Itoh, J., Park, D.C., Ohashi, N., Sakaguchi, I., Yashima, I., Haneda, H. and Tanaka, J.: Oxygen diffusion and defect chemistry in rare-earth-doped BaTiO3. J. Ceram. Soc. Jpn. 110, 495 (2002).CrossRefGoogle Scholar
35Narayan, J. and Holland, O.W.: Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization. Appl. Phys. Lett. 41, 239 (1982).CrossRefGoogle Scholar