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Distribution of visible luminescence centers in hydrogen-doped ZnO

Published online by Cambridge University Press:  23 November 2011

Laurent L.C. Lem ,
Cuong Ton-That  and
Matthew R. Phillips
Laurent L.C. Lem
Affiliation:
Department of Physics and Advanced Materials, University of Technology Sydney, Broadway, New South Wales 2007, Australia
Cuong Ton-That*
Affiliation:
Department of Physics and Advanced Materials, University of Technology Sydney, Broadway, New South Wales 2007, Australia
Matthew R. Phillips
Affiliation:
Department of Physics and Advanced Materials, University of Technology Sydney, Broadway, New South Wales 2007, Australia
*
a)Address all correspondence to this author. e-mail: Cuong.Ton-That@uts.edu.au
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Abstract

ZnO crystals have been investigated by scanning cathodoluminescence microscopy and spectroscopy at 80 K following hydrogen incorporation by plasma exposure. The intensity of the ZnO near-band-edge (NBE) emission is greatly enhanced while the defect-related green emission is quenched following plasma treatment. These effects are attributed to the passivation of zinc vacancies by hydrogen. The green and yellow intensities and their intensity ratios to the NBE vary with excitation depth for both undoped and H-doped ZnO crystals. The intensities of the green and yellow emissions exhibit sublinear dependencies on electron beam excitation density while the NBE intensity increases linearly with the excitation density. These saturation effects with increasing excitation density must be taken into account when assessing defects in ZnO by luminescence characterization.

Keywords

OptoelectronicII-VIOptical properties
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 23 , 14 December 2011 , pp. 2912 - 2915
Copyright
Copyright © Materials Research Society 2011

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