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Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon

Published online by Cambridge University Press:  31 January 2011

J. Linnros ,
R. G. Elliman  and
W. L. Brown
J. Linnros
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. G. Elliman
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
W. L. Brown
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

The ion-bombardment-induced reversible movement of a planar amorphous/crystalline interface in silicon has been studied between 100 and 400 °C. The temperature dependence of the ion dose rate at which there is zero interface movement has an activation energy of 1.2 eV, the dissociation energy of divacancies. Scaling of this dose rate for different ion species exhibits a quadratic dependence on the density of displaced atoms in the collision cascade of individual ions, giving further evidence for divacancy control of the interface movement.

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Articles
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Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1208 - 1211
Copyright
Copyright © Materials Research Society 1988

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References

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