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Effect of as-deposited residual stress on transition temperatures of VO2 thin films

Published online by Cambridge University Press:  03 March 2011

Kuang Yue Tsai ,
Tsung-Shune Chin ,
Han-Ping D. Shieh  and
Cheng Hsin Ma
Kuang Yue Tsai
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan
Tsung-Shune Chin*
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan
Han-Ping D. Shieh
Affiliation:
Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
Cheng Hsin Ma
Affiliation:
Materials Science and Engineering, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
*
a) Address all correspondence to this author.e-mail: tschin@mx.nthu.edu.tw
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Abstract

Transmittance loops upon thermal cycling of VO2 thin films were found to change among films with different fabrication conditions that lead to different transition temperatures (Tts) from that of a strain-free VO2 single crystal, 68 °C. The residual stresses in the films quantitatively determined from x-ray diffractometry were used to explain this variation. Electron spectroscopy for chemical analysis spectra showed that the difference in the binding energy of core electrons 2p1/2 and 2p3/2 of the vanadium atom are affected by residual stress and proportional to Tts of the films. The bond length between vanadium and oxygen atoms at room temperature varies with different residual stresses and, furthermore, affects the movements of both atoms during phase change (and hence the Tt of VO2 thin films). Residual stresses also affect the hysteresis span of the transmittance loop. The relationship between the residual stress of as-deposited VO2 films and the relative positions between vanadium and oxygen atoms are also delineated in detail.

Keywords

Thin filmOpticalMetal-insulator transition
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 8 , August 2004 , pp. 2306 - 2314
Copyright
Copyright © Materials Research Society 2004

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