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Effect of La and Y on Crystallization Temperatures of Hafnia and Zirconia

Published online by Cambridge University Press:  03 March 2011

Sergey V. Ushakov ,
Crystalyn E. Brown  and
Alexandra Navrotsky
Sergey V. Ushakov
Affiliation:
Thermochemistry Facility and NEAT ORU, University of California at Davis, Davis, California 95616
Crystalyn E. Brown
Affiliation:
Thermochemistry Facility and NEAT ORU, University of California at Davis, Davis, California 95616
Alexandra Navrotsky*
Affiliation:
Thermochemistry Facility and NEAT ORU, University of California at Davis, Davis, California 95616
*
a)Address all correspondence to this author. e-mail: anavrotsky@ucdavis.edu
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Abstract

Crystallization of amorphous Y- and La-doped HfO2 and ZrO2 nanophase powders was studied using thermal analysis and high-temperature x-ray diffraction. Substantial increase of crystallization temperature of amorphous hafnium and zirconium oxides could be achieved by alloying with La2O3. The crystallization temperature of Hf2La2O7 composition is higher than 900 °C, which makes it a candidate for advanced gate dielectrics. In contrast, Y-doping did not significantly raise the crystallization temperature.

Keywords

AmorphousDielectric propertiesDifferential thermal analysis (DTA)
Type
Rapid Communications
Information
Journal of Materials Research , Volume 19 , Issue 3 , March 2004 , pp. 693 - 696
Copyright
Copyright © Materials Research Society 2004

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