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The effect of oxygen in diamond deposition by microwave plasma enhanced chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Y. Liou
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
A. Inspektor
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
R. Weimer
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
D. Knight
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
R. Messier
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
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Abstract

High quality diamond thin films were deposited on different substrates at temperatures from 300 to 1000 °C by the microwave plasma enhanced chemical vapor deposition (MPCVD) system. The quality of deposited diamond films was improved by adding oxygen in the gas mixtures. Different ratios of methane to oxygen concentration in hydrogen at different temperatures have been studied. At high temperatures (800–1000 °C), the addition of oxygen will not only enhance the growth rate of deposited films but also extend the region of diamond formation. At low temperatures (<500 °C), the oxygen plays an important role in diamond film growth by preferentially etching the non-diamond carbon. Without the addition of oxygen, the films deposited at high temperatures (>900 °C) were either graphitic or diamond containing a large amount of graphitic or amorphous carbon and at low temperatures (<500 °C) were white, soot-like coatings which were easily scraped off. The quality of the deposited films was characterized by Raman spectroscopy and scanning electron microscopy.

Type
Diamond and Diamond-Like Materials
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1Spitsyn, B.V., Bouilov, L. L., and Derjaguin, B.V., J. Cryst. Growth 52, 219 (1981).CrossRefGoogle Scholar
2Matsumoto, S., Sato, Y., Kamo, M., and Sataka, N., Jpn. J. Appl. Phys. 21, L183 (1982).CrossRefGoogle Scholar
3Badzian, A.R. and DeVries, R.C., Mater. Res. Bull. XXIII, 385 (1988).CrossRefGoogle Scholar
4Inspektor, A., Liou, Y., McKenna, T., and Messier, R., Surface and Coating Technol. (1989, in press).Google Scholar
5Kawato, T. and Kondo, K., Jpn. J. Appl. Phys. 26, 1429 (1987).Google Scholar
6Mucha, J. A., Flamm, D. L., and Ibbotson, D. E., in Extended Abstracts of 19th Biennial Conference on Carbon, University Park, PA, 386 (1989).Google Scholar
7Saito, Y., Sato, K., Tanaka, H., Fujita, K., and Matuda, S., J. Mater. Sci. 23, 842 (1988).CrossRefGoogle Scholar
8Hirose, Y. and Terasawa, Y., Jpn. J. Appl. Phys. 25, L519 (1986).CrossRefGoogle Scholar
9Tanaka, , Sato, K., Saito, Y., and Miyadera, H., Proc. 8th Int. Symp. on Plasma Chemistry, edited by Akashi, K. and Kinabara, A. (International Union of Pure and Applied Chemistry, Tokyo, Japan, 1987), Vol. 1, p. 2463.Google Scholar
10Badzian, A.R., Badzian, T., and Pickrell, D., SPIE 969, 14 (1988).Google Scholar
11Kitabatake, M. and Wasa, K., J. Appl. Phys. 58, 1693 (1985).CrossRefGoogle Scholar
12Bachmann, P., Drawl, W., Knight, D., Weimer, R., and Messier, R., in Extended Abstracts No. 15, Diamond and Diamond-Like Materials Synthesis, edited by Johnson, G. H., Badzian, A. R., and Geis, M.W. (Materials Research Society, Pittsburgh, PA, 1988), p. 99.Google Scholar
13Liou, Y., Inspektor, A., Weimer, R., and Messier, R., Appl. Phys. Lett. 55, 631 (1989).CrossRefGoogle Scholar
14Liou, Y., Inspektor, A., Knight, D., Weimer, R., Pickrell, D., Badzian, A. R., and Messier, R., Proc. SPIE 1146, 12 (1989).CrossRefGoogle Scholar
15Inspektor, A., McKenna, T., Liou, Y., Bourget, L., Spear, K., and Messier, R., Proc. 1st Int. Symp. on Diamond and Diamond-Like Films (The Electrochemical Society, Pennington, NJ, 1989), p. 342.Google Scholar
16Collins, R.W., Cong, Y., Kim, Y.T., Vedam, K., Liou, Y., Inspektor, A., and Messier, R., Thin Solid Films 181, 565 (1989).CrossRefGoogle Scholar
17Knight, D.S. and White, W.B., J. Mater. Res. 4, 385 (1989).CrossRefGoogle Scholar
18Zhu, W., Badzian, A. R., and Messier, R., J. Vac. Sci. Technol. A 7, 2315 (1989).Google Scholar
19DeVries, R. C., Ann. Rev. Mater. Sci. 17, 161 (1987).CrossRefGoogle Scholar