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Effect of PbO evaporation on the composition and dielectric properties of PbO-MgO-Nb2O5 based dielectrics

Published online by Cambridge University Press:  31 January 2011

H. C. Ling ,
A. M. Jackson ,
M. F. Yan  and
W. W. Rhodes
H. C. Ling
Affiliation:
AT & T Bell Laboratories, Princeton, New Jersey 08540
A. M. Jackson
Affiliation:
AT & T Bell Laboratories, Princeton, New Jersey 08540
M. F. Yan
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
W. W. Rhodes
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We have studied the weight loss during sintering and the resulting phase constituents and dielectric properties of a series of compositions in the lead-rich region of the PbO:MgO:Nb2O5 phase diagram near the stoichiometric composition of Pb(Mg1/3Nb2/3)O3 (PMN). While a ternary system of PbTiO3–Pb(CO1/3Nb2/3)O3–PMN was used, only the PMN component was varied in composition. The observed weight loss was ascribed to PbO evaporation from the nonstoichiometric PMN component. It was found that the sintered PMN compositions at about 1000°C correspond to the stoichiometric composition with varying amounts of excess MgO. These sintered compositions can be calculated by taking the Nb ion as the controlling cation in forming the PMN unit cell, from which the excess MgO can be determined. The excess PbO in the starting compositions, above the amount needed to form the sintered compositions of Pb(Mg1/3Nb2/3)O3 plus excess MgO, serves as a densification aid during the sintering process. Subsequently, the excess PbO is lost through evaporation. The peak dielectric constant of these compositions varies between 12000 and 18500, with the highest value attained in the sintered composition corresponding to stoichiometric PMN plus 0.229 mole of excess MgO. The optimum processing conditions for this composition are also identified.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 3 , March 1990 , pp. 629 - 639
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1Smolenskii, G. A. and Agranovskaya, A.I., Sov. Phys. Tech. Phys. 3, 1380–1382 (1958).Google Scholar
2Bokov, V. A. and Mylnikova, I. E., Sov. Phys. Solid State 3,613–623 (1961).Google Scholar
3Bonner, W. A., Dearborn, E. F., Geusic, J. E., Macros, H. M., and Van Uitert, L. G., Appl. Phys. Lett. 10, 163 (1967)CrossRefGoogle Scholar
4Smith, J.W., “Dielectric Properties of Lead Magnesium Niobate,” Ph.D. Thesis, The Pennsylvania State University, 1967.Google Scholar
5Fritsberg, V.Y. and Fritsberg, P. A., Sov. Phys. Crystallogr. 24, 492–493 (1979).Google Scholar
6Smolenskii, G. A. and Agranovskaya, A. I., Sov. Phys. Solid State 1, 1429–1437 (1959).Google Scholar
7Jang, S. J., Cross, L. E., and Uchino, K., J. Am. Ceram. 64,209–212 (1981).CrossRefGoogle Scholar
8Lejeune, M. and Biolot, J.P., Ceram. Int. 8, 99–104 (1982).CrossRefGoogle Scholar
9Swartz, S. L., Shrout, T. R., Schulze, W. A., and Cross, L. E., J. Am. Ceram. 67, 312–315 (1984).CrossRefGoogle Scholar
10Chen, J., Gorton, A., Chen, H. M., and Harmer, M., J. Am. Ceram. Soc. 69 (12), C303–C305 (1986).Google Scholar
11Lejeune, M. and Biolot, J.P., Am. Ceram. Soc. Bull. 65 (4), 679–682 (1986).Google Scholar
12Goo, E., Yamamoto, T., and Okazaki, K., J. Am. Ceram. Soc. 69 (8), C188–190 (1986).CrossRefGoogle Scholar
13Guha, J. P. and Anderson, H.U., J. Am. Ceram. Soc. 69 (11), C287–288 (1986).Google Scholar
14Uchino, K., Am. Ceram. Soc. Bull. 65 (4), 647–652 (1986).Google Scholar
15Cross, L.E., Ferroelectrics 76, 241–267 (1987).CrossRefGoogle Scholar
16Swartz, S.L. and Shrout, T. R., Mater. Res. Bull. 18, 663–667 (1982); J. Am. Ceram. 67 (5), 312–315 (1984).Google Scholar
17Ling, H. C., Yan, M. F., and Rhodes, W.W., “Method of Preparing Ceramic Composition,” U.S. patent # 4,637,989 (1987).Google Scholar
18Shrout, T. R. and Halliyal, A., Am. Ceram. Soc. Bull. 66 (4), 704–711 (1987).Google Scholar
19Constantino, S. A., Dayton, G. O., and Biggers, J.V., “Sintering Kinetics and Properties of Lead Magnesium Niobate,” Proc. of Symp. on Ceramic Dielectrics, 91st Annual Meeting of American Ceramic Society, Indianapolis (1989), to be published by Am. Ceram. Soc.Google Scholar
20Yan, M.F., Ling, H.C., and Rhodes, W.W., J. Mater. Res. 4 (4), 930–944 (1989).CrossRefGoogle Scholar
21Yan, M. F., Ling, H. C., and Rhodes, W.W., J. Mater. Res. 4 (4), 945–966 (1989).CrossRefGoogle Scholar
22 EIA Standard RS-198-C on Ceramic Dielectric Capacitors, Classes I, II, III, and IV, Engineering Department, Electronic Industries Association, Washington, DC 20006 (Nov. 1983). The EIA Z5U specifications are (1) operating temperature range between 10 and 85 °C; (2) - 56% < (C(T) - C (25 °C))/C (25 °C) < 22% where C is the capacitance; (3) dissipation factor < 4% at 25 °C; and (4) resistance-capacitance (RC) product ≥ 1000 ohm-farad.Google Scholar
23Chang, D. D., “Electrical Characteristics and Reliability Study of High K Lead-Based Multilayer Ceramic Capacitors,” Proc. of Symp. on Ceramic Dielectrics, 91st Annual Meeting of American Ceramic Society, Indianapolis (1989), to be published by Am. Ceram. Soc.Google Scholar
24Ling, H. C., Yan, M. F., and Rhodes, W.W., Ferroelectrics 89, 69–80 (1989).CrossRefGoogle Scholar