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Effect of p-GaN layer on the properties of InGaN/GaN green light-emitting diodes

Published online by Cambridge University Press:  13 February 2015

Wenliang Wang ,
Zuolian Liu ,
Shizhong Zhou ,
Weijia Yang ,
Yunhao Lin ,
Haiyan Wang ,
Zhiting Lin ,
Huirong Qian  and
Guoqiang Li
Wenliang Wang
Affiliation:
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Zuolian Liu
Affiliation:
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Shizhong Zhou
Affiliation:
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Weijia Yang
Affiliation:
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Yunhao Lin
Affiliation:
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Haiyan Wang
Affiliation:
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Zhiting Lin
Affiliation:
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Huirong Qian
Affiliation:
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Guoqiang Li*
Affiliation:
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; and Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
*
a)Address all correspondence to this author. e-mail: msgli@scut.edu.cn
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Abstract

InGaN/GaN green light-emitting diodes (LEDs) have been prepared by metal-organic chemical vapor deposition with various growth temperatures for p-GaN layer. The structural and optoelectronic properties of as-grown multiple quantum wells (MQWs) and LEDs are studied in detail. It reveals that with the growth of p-GaN layer, the crystalline qualities of the as-grown n-GaN layer are improved significantly, while the optoelectronic properties of MQWs are decreased dramatically. Furthermore, the mechanisms for the effect of p-GaN growth temperature on the properties of InGaN/GaN green LEDs are proposed. It is demonstrated that the p-GaN layer grown at a suitable temperature of 950 °C shows the highest optoelectronic properties due to the fact that this suitable temperature for p-layer growth is good for the Mg doping and would not cause the fluctuation of indium in the MQWs, and eventually benefits to the effective recombination of carriers. This work provides an optimized p-GaN layer growth temperature for realizing highly efficient InGaN/GaN green LED devices.

Keywords

InGaN/GaN green LEDsp-GaNinfluencegrowth temperaturehighly efficient
Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 4 , 28 February 2015 , pp. 477 - 483
Copyright
Copyright © Materials Research Society 2015 

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