Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-28T06:19:14.998Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of phosphorous content on phase transformation induced stress in Sn/Ni(P) thin films

Published online by Cambridge University Press:  03 March 2011

J.Y. Song  and
Jin Yu
J.Y. Song*
Affiliation:
Division of Advanced Technology, Korea Research Institute of Standards and Science, Yuseong-gu, Daejeon 305-600, South Korea
Jin Yu
Affiliation:
Center for Electronic Packaging Materials, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 305-701, South Korea
*
a) Address all correspondence to this author. e-mail: jysong@kriss.re.kr
Get access

Abstract

The film stress evolutions induced by the phase transformation of Sn/Ni(P) films during thermal treatment were investigated using an in situ measurement of wafer curvature by laser scanning. Apparently, tensile stress developed due to the layer-by-layer formation of Ni3Sn4 and Ni3P phases for Sn/Ni(11.7P) films, and a compressive stress evolved for Sn/Ni(3P) films, despite the same phase transformation. The molar volume mismatch and x-ray diffraction analyses before and after the reaction between Sn and Ni(P) films suggested that a compressive stress existed in the Ni3Sn4 layer while the Ni3P layer was under a tensile stress state. The apparent stress states (tensile or compressive) for overall thickness of the films formed by the layer-by-layer transformation in Sn/Ni(P) were determined by the competition between compressive stress related to Ni3Sn4 formation and tensile stress caused by Ni3P formation. The stress states were dependent upon the relative thickness of the product layers with varying P content.

Keywords

FilmLayeredPhase transformation
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 9 , September 2006 , pp. 2261 - 2269
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Tummala, R.R.: Fundamentals of Microsystems Packaging (McGraw-Hill, New York, 2001), p. 361.Google Scholar
2Jang, J.W., Kim, P.G., Tu, K.N., Frear, D.R., and Thompson, P.: Solder reaction-assisted crystallization of electroless Ni–P under bump metallization in low cost flip chip technology. J. Appl. Phys. 85, 8456 (1999).CrossRefGoogle Scholar
3Jang, J.W., Frear, D.R., Lee, T.Y., and Tu, K.N.: Morphology of interfacial reaction between lead-free solders and electroless Ni–P under bump metallization. J. Appl. Phys. 88, 6359 (2000).CrossRefGoogle Scholar
4Lee, C.Y. and Lin, K.L.: The interaction kinetics and compound formation between electroless Ni–P and solder. Thin Solid Films 249, 201 (1994).CrossRefGoogle Scholar
5Färber, B., Cadel, E., Menand, A., Schmitz, G., and Kirchheim, R.: Phosphorus segregation in nanocrystalline Ni–3.6 at.%P alloy investigated with the tomographic atom probe (TAP). Acta Mater. 48, 789 (2000).CrossRefGoogle Scholar
6Sohn, Y.C., Jin, Yu., Kang, S.K., Shih, D.Y., and Choi, W.K.: Effects of phosphorus content on the reaction of electroless Ni–P with Sn and crystallization of Ni–P. J. Electron. Mater. 33, 790 (2004).CrossRefGoogle Scholar
7Liu, P.L., Xu, Z., and Shang, J.K.: Thermal stability of electroless-nickel/solder interface: Part A. Interfacial chemistry and microstructure. Metall. Mater. Trans. A 31, 2857 (2000).CrossRefGoogle Scholar
8Kang, S.K. and Ramachandran, V.: Growth kinetics of intermetallic phases at the liquid Sn and solid Ni interface. Scripta Metall. 14, 421 (1980).CrossRefGoogle Scholar
9Gur, D. and Bamberger, M.: Reactive isothermal solidification in the Ni–Sn system. Acta Mater. 46, 4917 (1998).CrossRefGoogle Scholar
10Bader, S., Gust, W., and Hieber, H.: Rapid formation of intermetallic compounds by interdiffusion in the Cu-Sn and Ni-Sn systems. Acta Metall. Mater. 43, 329 (1995).Google Scholar
11Liu, C.Y., Chen, C., Mal, A.K., and Tu, K.N.: Direct correlation between mechanical failure and metallurgical reaction in flip chip solder joints. J. Appl. Phys. 85, 3882 (1999).CrossRefGoogle Scholar
12Jeon, Y.D., Paik, K.W., Bok, K.S., Choi, W.S., and Cho, C.L.: Studies of electroless nickel under bump metallurgy-solder interfacial reactions and their effects on flip chip solder joint reliability. J. Electron. Mater. 31, 520 (2002).CrossRefGoogle Scholar
13Guo, Y., Kuo, S.M., and Zhang, C.: Reliability evaluations of under bump metallurgy in two solder systems. IEEE Trans. Comp. Packag. Technol. 24, 655 (2001).CrossRefGoogle Scholar
14Chan, Y.C., Tu, P.L., Tang, C.W., Hung, K.C., and Lai, J.K.L.: Reliability studies of μBGA solder joints-effects of Ni–Sn intermetallic compound. IEEE Trans. Adv. Packag. 24, 25 (2001).CrossRefGoogle Scholar
15Pang, J.H.L. and Chong, D.Y.R.: Flip chip on board solder joint reliability analysis using 2-D and 3-D FEA models. IEEE Trans. Adv. Packag. 24, 499 (2001).CrossRefGoogle Scholar
16Mitchell, D., Guo, Y., and Sarihan, V.: Methodology for studying the impact of intrinsic stress on the reliability of the electroless Ni UBM structure. IEEE Trans. Comp. Packag. Technol. 24, 667 (2001).CrossRefGoogle Scholar
17Song, J.Y. and Yu, J.: Residual stress measurements in electroless plated Ni–P films. Thin Solid Films 415, 167 (2002).CrossRefGoogle Scholar
18Song, J.Y., Yu, J., and Lee, T.Y.: Analysis of phase transformation kinetics by intrinsic stress evolutions during the isothermal aging of amorphous Ni(P) and Sn/Ni(P) films. J. Mater. Res. 19, 1257 (2004).CrossRefGoogle Scholar
19Buaud, P.P., d’Heurle, F.M., Irene, E.A., Patnaik, B.K., and Parikh, N.R.: In situ strain measurements during the formation of platinum silicide films. J. Vac. Sci. Technol. B 9, 2536 (1991).CrossRefGoogle Scholar
20Loopstra, O.B., van Snek, E.R., de Keijser, Th.H., and Mittemeijer, E.J.: Model for stress and volume change of a thin film on a substrate upon annealing: application to amorphous Mo/Si multilayers. Phys. Rev. B: Condens. Matter 44, 13519 (1991).CrossRefGoogle ScholarPubMed
21Jongste, J.F., Alkemade, P.F.A., Janssen, G.C.A.M., and Radelaar, S.: Kinetics of the formation of C49 TiSi2 from Ti-Si multilayers as observed by in situ stress measurements. J. Appl. Phys. 74, 3869 (1993).CrossRefGoogle Scholar
22Lucadamo, G. and Barmak, K.: Stress evolution in polycrystalline thin film reactions. Thin Solid Films 389, 8 (2001).CrossRefGoogle Scholar
23Hesemann, H.Th., Müllner, P., and Arzt, E.: Stress and texture development during martensitic transformation in cobalt thin films. Scripta Mater. 44, 25 (2001).CrossRefGoogle Scholar
24Song, J.Y., Yu, J., and Lee, T.Y.: Effects of reactive diffusion on stress evolution in Cu–Sn films. Scripta Mater. 51, 167 (2004).CrossRefGoogle Scholar
25Plating, Electroless: Fundamentals and Applications, edited by Mallory, O.G. and Hajdu, B.J. (American Electroplaters and Surface Finishers Society, Orlando, FL, 1990).Google Scholar
26Tu, K.N. and Thompson, R.D.: Kinetics of interfacial reaction in bimetallic Cu–Sn thin films. Acta Metall. 30, 947 (1982).CrossRefGoogle Scholar
27Stoney, G.G.: The tension of metallic films deposited by electrolysis. Proc. R. Soc. London A 82, 172 (1909).Google Scholar
28Nix, W.D.: Mechanical properties of thin films. Metall. Trans. A 20, 2217 (1989).CrossRefGoogle Scholar
29The Mechanics of Solder Alloy Interconnects, edited by Frear, D.R., Burchett, S.N., Morgan, H.S. and Lau, J.H. (Van Nostrand Reinhold, New York, 1994), pp. 60.Google Scholar
30Pedersen, T.P. Leervad, Kalb, J., Njoroge, W.K., Wamwangi, D., Wuttig, M., and Spaepen, F.: Mechanical stresses upon crystallization in phase change materials. Appl. Phys. Lett. 79, 3597 (2001).CrossRefGoogle Scholar
31Floro, J.A., Hearne, S.J., Hunter, J.A., Kotula, P., Chason, E., Seel, S.C., and Thompson, C.V.: The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films. J. Appl. Phys. 89, 4886 (2001).CrossRefGoogle Scholar