Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-29T11:08:59.988Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of ultraviolet cure on the interfacial toughness and structure of SiOC thin film on Si substrate

Published online by Cambridge University Press:  31 January 2011

M. Takeda ,
N. Matoba ,
K. Matsuda ,
H. Seki ,
K. Inoue ,
M. Oishi  and
M. Sakai
M. Oishi
Affiliation:
Toray Research Center, Inc., Otsu, 520-8567 Japan
M. Sakai*
Affiliation:
Department of Materials Science, Toyohashi University of Technology, Tempakucho, Toyohashi, 441-8580 Japan
*
b)This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/jmr_policy
Get access

Abstract

An experimental study on the adhesion of thin films was conducted for the ultraviolet (UV)-cured SiOC films on Si substrate by examining the mechanical energy balance during the indentation process combined with atomic force microscopy observation. The effect of UV cure on the interfacial delamination toughness and the structure of the SiOC films are discussed. The energy release rate of the SiOC film/Si substrate interfacial delamination increases with the increases in the time of UV curing, indicating that the indentation method is efficient to examine the adhesion of coating. As the UV curing time increases, the film thickness and the Si–CH3 bond structure decrease, whereas the SiO2 network structure develops and the mechanical properties of the film are improved. Furthermore, the energy release rate of SiOC film/Si interfacial delamination is well correlated in a proportional manner to the Young's modulus of the film.

Keywords

Nanoindentation
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 10 , October 2010 , pp. 1910 - 1916
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Berry, I.L. III, Waldfried, C., Durr, K.Requirements and constraints on optimizing UV processing of low-k dielectricsMaterials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics edited by Q. Lin, E.T. Ryan, W. Wu, and D.Y. Yoon (Mater. Res. Soc. Symp. Proc. 990, Warrendale, PA 2007) 0990-B02-01Google Scholar
2.Marshall, D.B., Evans, A.G.Measurement of adherence of residually stressed thin films by indentation. I. Mechanics of interface delamination. J. Appl. Phys. 56, 2632 (1984)CrossRefGoogle Scholar
3.De Boer, M.P., Gerberich, W.W.Microwedge indentation of the thin film fine line. I. Mechanics. Acta Mater. 44, 3169 (1996)CrossRefGoogle Scholar
4.Rosenfield, L.G., Ritter, J.E., Lardner, T.J., Lin, M.R.Use of the microindentation technique for determining interfacial fracture energy. J. Appl. Phys. 67, 3291 (1990)CrossRefGoogle Scholar
5.Kriese, M.D., Gerberich, W.W., Moody, N.R.Quantitative adhesion measures of multilayer films: Part I. Indentation mechanics. J. Mater. Res. 14, 3007 (1999)CrossRefGoogle Scholar
6.Kim, Y.S., Aravas, N.Elastoplastic analysis of the peel test. Int. J. Solids Struct. 24, 417 (1998)CrossRefGoogle Scholar
7.Ma, Q.A four-point bending technique for studying subcritical crack growth in thin films and at interfaces. J. Mater. Res. 12, 840 (1997)CrossRefGoogle Scholar
8.Venkataraman, S., Kohlstedt, D.L., Gerberich, W.W.Microscratch analysis of the work of adhesion for Pt thin films on NiO. J. Mater. Res. 7, 1126 (1992)CrossRefGoogle Scholar
9.Hay, J.C., Linger, E.G., Liu, X.H.Evaluation of the modified edge lift-off test for adhesion characterization in microelectronic multifilm applications. J. Mater. Res. 16, 385 (2001)CrossRefGoogle Scholar
10.Oliver, W.C., Pharr, G.M.An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7, 1564 (1992)CrossRefGoogle Scholar
11.Li, X., Bhushan, B.Measurement of fracture toughness of ultra-thin amorphous carbon films. Thin Solid Films 315, 214 (1998)CrossRefGoogle Scholar
12.Volinsky, A.A., Gerberich, W.W.Nanoindentation techniques for assessing mechanical reliability at the nanoscale. Microelectron. Eng. 69, 519 (2003)CrossRefGoogle Scholar
13.Malzbender, J., de With, G.Energy dissipation, fracture toughness and the indentation load-displacement curve of coated materials. Surf. Coat. Technol. 135, 60 (2000)CrossRefGoogle Scholar
14.Etienne-Calas, S., Duri, A., Ettine, P.Fracture study of organic–inorganic coating using nanoindentation technique. J. Non-Cryst. Solids 344, 60 (2004)CrossRefGoogle Scholar
15.Chen, J., Bull, S.J.Assessment of the toughness of thin coating using nanoindentation under displacement control. Thin Solid Films 494, 1 (2006)CrossRefGoogle Scholar
16.Chen, J., Bull, S.J.Indentation fracture and toughness assessment for thin optical coatings on glass. J. Phys. D: Appl. Phys. 40, 5401 (2007)CrossRefGoogle Scholar
17.Chen, J., Lin, Z., Bull, S.J., Philips, C.L., Bristowe, P.D.Experimental and modeling techniques for assessing the adhesion of very thin coatings on glass. J. Phys. D: Appl. Phys. 42, 214003 (2009)CrossRefGoogle Scholar
18.Li, M., Carter, C.B., Hillmyer, M.A., Gerberich, W.W.Adhesion of polymer-inorganic interfaces by nanoindentation. J. Mater. Res. 16, 3378 (2001)Google Scholar
19.Iacopi, F., Travaly, Y., Eyckens, B., Abell, T., Guyer, E.P., Gage, D.M., Dauskardt, R.H., Sajavaara, T., Houthoofd, K., Grobat, P., Jacobs, P., Maex, K.Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation. J. Appl. Phys. 99, 053511 (2006)CrossRefGoogle Scholar
20.Yang, C.S., Kannan, M., Choi, C.K.Studies on the low dielectric SiOC(–H) thin films deposited using MTMS and oxygen as precursors by UV source assisted PECVD. Surf. Coat. Technol. 200, 1624 (2005)CrossRefGoogle Scholar
21.Lin, Y., Xiang, Y., Tsui, T.Y., Vlassak, J.J.PECVD low-permittivity organosilicate glass coatings: Adhesion, fracture and mechanical properties. Acta Mater. 56, 4933 (2008)CrossRefGoogle Scholar
22.Smith, R.S., Tsui, T.Y., Ho, P.S.Effects of ultraviolet radiation on ultra-low-dielectric constant thin film fracture properties. J. Mater. Res. 24, 2796 (2009)CrossRefGoogle Scholar
23.Albrecht, M.G., Blanchette, C.Materials issues with thin film hydrogen silsequioxane low k dielectrics. J. Electrochem. Soc. 145, 4019 (1998)CrossRefGoogle Scholar
24.Zenasni, A., Jousseaume, V., Gourhant, O., Favennec, L., Maury, P., Mage, L.Structural transformation in PECVD ultralow-k material during porogen removal by UV assisted thermal curingMaterials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics edited by Q. Lin, E.T. Ryan, W. Wu, and D.Y. Yoon (Mater. Res. Soc. Symp. Proc. 990, Warrendale, PA 2007) 0990-B02-04Google Scholar