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Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition

Published online by Cambridge University Press:  31 January 2011

Yongchan Kim ,
Sanghyun Woo ,
Hyungchul Kim ,
Jaesang Lee ,
Honggyu Kim ,
Hyerin Lee  and
Hyeongtag Jeon
Hyungchul Kim
Affiliation:
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
Jaesang Lee
Affiliation:
Division of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea
Hyeongtag Jeon*
Affiliation:
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
*
a)Address all correspondence to this author. e-mail:hjeon@hanyang.ac.kr
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Abstract

The physical and electrical properties of La2O3 with and without an Al2O3 capping layer deposited by remote plasma atomic layer deposition were investigated. The electrical properties of the La2O3 films degraded due to the formation of lanthanum hydroxide after being exposed to air. The results of x-ray photoemission spectroscopy showed that the quantity of OH groups absorbed increased after exposure to air. For La2O3 with an Al2O3 capping layer, however, the electrical properties of the film did not change substantially because the capping layer effectively suppressed the formation of lanthanum hydroxide. The capacitance of the La2O3 decreased more than 30% after exposure to air, while La2O3 with an Al2O3 capping layer decreased by only about 4%. The VFB value of the La2O3 with an Al2O3 capping layer was near zero, and the hysteresis was about 120 mV. The leakage current densities of the film were maintained below 5 × 10−7 A/cm2 up to −15 MV/cm and the effective breakdown field was about −23.5 MV/cm.

Keywords

Atomic layer depositionDielectric propertiesLa
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 10 , October 2010 , pp. 1898 - 1903
Copyright
Copyright © Materials Research Society 2010

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