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Effects of defects on the morphologies of GaN nanorods grown on Si (111) substrates

Published online by Cambridge University Press:  31 January 2011

Kyu Hyung Lee ,
Jeong Yong Lee ,
Y.H. Kwon ,
Tae Won Kang ,
J.H. You ,
D.U. Lee  and
Taewhan Kim
Jeong Yong Lee
Affiliation:
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Korea
Tae Won Kang
Affiliation:
Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Taewhan Kim*
Affiliation:
National Research Laboratory for Nano Quantum Electronics Devices, Department of Electronics and Communications Engineering, Hanyang University, Seoul 133-791, Korea
*
a) Address all correspondence to this author. e-mail: twk@hanyang.ac.kr
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Abstract

Scanning electron microscopy and transmission electron microscopy images and selected area electron diffraction pattern showed that the one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurzite structures were formed on Si (111) substrates by using hydride vapor-phase epitaxy without a catalyst. Although some stacking faults and inversion domain boundaries existed in the GaN nanorods, few other defects such as threading dislocations were observed. The formation of the facet plane in the N-polar region of the GaN nanorod containing an inversion domain boundary originated from the slow growth rate, followed by the lateral adatom diffusion from the Ga-polar region to reduce the length difference.

Keywords

DefectsMicrostructureNanostructure
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 10 , October 2009 , pp. 3032 - 3037
Copyright
Copyright © Materials Research Society 2009

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