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Effects of deposition temperature on the electrical properties of electron cyclotron resonance plasma-enhanced chemical vapor deposition Ta2O5 film and the formation of interfacial SiO2

Published online by Cambridge University Press:  03 March 2011

Il Kim ,
Jong-Seok Kim ,
Bok-Won Cho ,
Sung-Duck Ahn ,
John S. Chun  and
Won-Jong Lee
Il Kim
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
Jong-Seok Kim
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
Bok-Won Cho
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
Sung-Duck Ahn
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
John S. Chun
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
Won-Jong Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
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Abstract

High-quality Ta2O5 thin films for high-density memory devices were prepared at low temperatures by electron cyclotron resonance plasma-enhanced chemical vapor depostion (ECR-PECVD) without postannealing treatment. The effects of deposition temperature on the microstructure, composition, and electrical properties of the dielectric films were studied. The increase in deposition temperature from 145 °C to 205 °C improved the stoichiometry of the Ta2O5 thin films. As a consequence, EBD increased from 3.3 MV/cm to 4.4 MV/cm, and ∊Ta2O5, increased from 14 to 25. Interfacial SiO2 layer was observed by cross-sectional TEM, and its effects on the electrical properties of the overall dielectric film were also studied. The incubation period in which interfacial SiO2 grows was discussed with regard to reactivity between oxygen and Si substrate.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 11 , November 1995 , pp. 2864 - 2869
Copyright
Copyright © Materials Research Society 1995

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References

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