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The effects of heat treatment on B2O3-contained ZnO varistor

Published online by Cambridge University Press:  03 March 2011

Jow-Lay Huang  and
Kuo-Bin Li
Jow-Lay Huang
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
Kuo-Bin Li
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
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Abstract

The effects of annealing on B2O3-contained ZnO varistors with particular emphasis on the degradation behavior, nonlinear coefficient, trap density, donor density, and Schottky energy barrier were investigated. The thermal stability of ZnO varistors was considerably improved by the thermal annealing process.

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Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 6 , June 1994 , pp. 1526 - 1532
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Inada, M., Jpn. J. Appl. Phys. 17 (1), 1–10 (1978).CrossRefGoogle Scholar
2Eda, K., Iga, A., and Matsuoka, M., J. Appl. Phys. 51 (5), 2678–2684 (1980).CrossRefGoogle Scholar
3Philip, H. R. and Levinson, L. M., Am. Ceram. Soc. Bull. 7, 1–21 (1983).Google Scholar
4Gupta, T. K., Carlson, W. G., and Hower, P. L., J. Appl. Phys. 52 (6), 4104–4111 (1981).CrossRefGoogle Scholar
5Gupta, T. K., J. Am. Ceram. Soc. 73 (7), 1817–1840 (1990).CrossRefGoogle Scholar
6Gupta, K., Carlson, W. G., and Hall, B. O., in Grain Boundaries in Semiconductors, edited by Leamy, J. H., Pike, G. E., and Seager, C. H. (Elsevier, New York, 1982), pp. 399–404.Google Scholar
7Kim, D. D., Oh, M. H., and Kim, C. H., J. Mater. Sci. 21 (10), 3491 (1986).CrossRefGoogle Scholar
8Gupta, T. K. and Carlson, W. G., J. Mater. Sci. 20, 3487–3500 (1985).CrossRefGoogle Scholar
9Chen, S., Master Thesis, National Cheng Kung University, Republic of China (1990).Google Scholar
10Eda, K., Jpn. J. Appl. Phys. 49 (5), 2964–2972 (1978).CrossRefGoogle Scholar
11Heinz, and Henisch, K., Semiconductor Contacts-An Approach To Ideas and Models, Chap. 4 (Clarendon Press, Oxford, 1984).Google Scholar
12Hill, R. M., Philos. Mag. 23, 59 (1971).CrossRefGoogle Scholar
13Iga, A., Matsuoka, M., and Masuyama, M., Jpn. J. Appl. Phys. 15 (6), 1161 (1976).CrossRefGoogle Scholar
14Iga, A., Matsuoka, M., and Masuyama, M., Jpn. J. Appl. Phys. 15 (6), 1847 (1976).CrossRefGoogle Scholar