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Effects of mesoporous structure on grain growth of nanostructured tungsten oxide

Published online by Cambridge University Press:  03 March 2011

Lay Gaik Teoh
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
Jiann Shieh
Affiliation:
National Nano Device Laboratories, Hsinchu, Taiwan, Republic of China
Wei Hao Lai
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
Min Hsiung Hon*
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
*
a) Address all correspondence to this author. e-mail address: mhhon@mail.ncku.edu.tw
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Abstract

The effects of mesoporous structure on grain growth were investigated in this study. The synthesis was accomplished using block copolymer as the organic template and tungsten chloride as the inorganic precursor. Thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy, x-ray diffractometry (XRD), transmission electron microscopy, and N2 adsorption/desorption isotherms were used to characterize the microstructures obtained for different temperatures. TGA and XRD analyses demonstrate that copolymers were expelled at 150–250 °C, and mesoporous structure was stable up to 350 °C. The pore diameter and the surface area evaluated from the Barrett-Joyner-Halenda model and Brunauer–Emmett–Teller method indicated that the average pore diameter is 4.11 nm and specific surface area is 191.5 m2/g for 250 °C calcination. Arrhenius equation used to calculate the activation energy for grain growth demonstrates that the activation energy for grain growth was about 38.1 kJ/mol before mesostructure collapse and 11.3 kJ/mol after collapse. These results show evidence of two different mechanisms governing the process of grain growth. The presence of the pore can be related to the obstacle for grain growth.

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Articles
Copyright
Copyright © Materials Research Society 2004

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