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Elastic and plastic anisotropy during growth from the melt of single semiconductor crystals

Published online by Cambridge University Press:  31 January 2011

John C. Lambropoulos
John C. Lambropoulos
Affiliation:
Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627
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Abstract

The effect on dislocation density of elastic anisotropy (relation of growth direction to elastic stiffness tensor of cubic symmetry) and of plastic anisotropy (relation of growth direction to crystallographic slip systems of {111} ≪110≫ type) is investigated for the growth from the melt of shaped, single-crystal semiconductors of III–V compounds (typically GaAs, InP) by the Czochralski method. The thermal stresses are determined numerically by using three-dimensional finite element techniques for growth along the ≪100≫, ≪111≫ or ≪110≫ directions. The equivalent shear stress is calculated and it is assumed that the dislocation density is proportional to the sum over all slip systems of the excess of the resolved thermal shear stress over the crystal's yield stress in shear. It is shown that proper account of both elastic and plastic anisotropy is necessary in order to correlate numerical estimates of dislocation density to experimentally determined patterns. In particular, it is shown that the effect of elastic anisotropy is to produce significantly higher dislocation densities, especially for the case of ≪111≫ and ≪110≫ growth. For moderate levels of elastic anisotropy, the dislocation density levels during ≪111≫ and ≪110≫ growth become significantly larger than density, during ≪100≫ growth, at specific locations within the crystal. The correlation between dislocation density and equivalent shear stress is presented, and the effect of plastic anisotropy is thus discussed. It is shown that the assumption of elastic isotropy leads to dislocation density levels that considerably underestimate the levels but, for a given growth direction, are qualitatively similar to the dislocation density patterns corresponding to the three-dimensional numerical solutions in which elastic anisotropy is accounted in full.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 3 , June 1988 , pp. 531 - 537
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1Jordan, A. S., Neida, A. R. Von, and Caruso, R., J. Cryst. Growth 76, 243 (1986).CrossRefGoogle Scholar
2Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974).Google Scholar
3Matthews, J. W., in Dislocations in Solids, edited by Nabarro, F. R. N. (North-Holland, Amsterdam, 1979), Vol. 2, p. 462.Google Scholar
4Penning, P., Philips Res. Rep. 13, 79 (1958).Google Scholar
5Jordan, A. S., Caruso, R., and Neida, A. R. Von, Bell System Tech. J. 59, 593 (1980).CrossRefGoogle Scholar
6Neida, A. R. Von and Jordan, A. S., J. Met. 38, 35 (1986).Google Scholar
7Jordan, A. S., Neida, A. R. Von, and Caruso, R., J. Cryst. Growth 70, 555 (1984).CrossRefGoogle Scholar
8Kobayashi, N. and Iwaki, T., J. Cryst. Growth 73, 96 (1985).CrossRefGoogle Scholar
9Iwaki, T. and Kobayashi, N., J. Appl. Mech. 48, 866 (1981).CrossRefGoogle Scholar
10Iwaki, T. and Kobayashi, N., Int. J. Solids Struct. 22, 307 (1986).Google Scholar
11Duseaux, M., J. Cryst. Growth 61, 576 (1983).CrossRefGoogle Scholar
12Szabo, G., J. Cryst. Growth 73, 131 (1985).CrossRefGoogle Scholar
13Motakef, S. and Witt, A. F., J. Cryst. Growth 80, 37 (1987).CrossRefGoogle Scholar
14Lambropoulos, J. C., J. Cryst. Growth 80, 245 (1987).CrossRefGoogle Scholar
15Iwaki, T. and Kobayashi, N., J. Cryst. Growth 82, 335 (1987).CrossRefGoogle Scholar
16Lambropoulos, J. C., J. Cryst. Growth (to be published).Google Scholar
17Elliott, A. G., Wei, C. L., and Farraro, R., J. Cryst. Growth 70, 169 (1984).CrossRefGoogle Scholar
18Antonov, P. I., Bakholdin, S. I., Galaktionov, E. V., and Tropp, E. A., Izv. Akad. Nauk, Ser. Fiz. 44, 255 (1980).Google Scholar
19Antonov, P. I., Bakholdin, S. I., Galaktionov, E. V., Tropp, E. V., and Nikanorov, S. P., J. Cryst. Growth 52, 404 (1981).CrossRefGoogle Scholar
20Lambropoulos, J. C., in Proceedings of International Conference on Computational Methods for Predicting Material Processing Defects, edited by Predeleanu, M. (Elsevier, Amsterdam, 1987).Google Scholar
21Hirth, J. and Lothe, J., Theory of Dislocations (Wiley, New York, 1982), 2nd ed.Google Scholar
22Lambropoulos, J. C., Hutchinson, J. W., Bell, R. O., Chalmers, B., and Calejs, J. P., J. Cryst. Growth 65, 324 (1983).CrossRefGoogle Scholar