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Elastic strain gradients and x-ray line broadening effects as a function of temperature in aluminum thin films on silicon

Published online by Cambridge University Press:  03 March 2011

Ramnath Venkatraman ,
Paul R. Besser ,
John C. Bravman  and
Sean Brennan
Ramnath Venkatraman
Affiliation:
Microelectronics, IBM Corporation, 1701 North Street, Endicott, New York 13760
Paul R. Besser
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305–2205
John C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305–2205
Sean Brennan
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, California 94305
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Abstract

Grazing incidence x-ray scattering (GIXS) with a synchrotron source was used to measure elastic strain gradients as a function of temperature in aluminum and aluminum alloy thin films of different thicknesses on silicon. The stresses in the films are induced as a result of the difference in thermal expansion coefficient between film and substrate. Disregarding minor deviations at the surface, it is shown that there are no gross strain gradients in these films in the range of temperatures (between room temperature and 400 °C) considered. Significant x-ray line broadening effects were observed, suggesting an accumulation of dislocations on cooling the films and their annealing out as the films were being reheated. The variation of the dislocation density during thermal cycling compares well in nature with that of the concurrent variation in film stress, indicating that large strain hardening effects contribute toward the film flow stress.

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Articles
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Journal of Materials Research , Volume 9 , Issue 2 , February 1994 , pp. 328 - 335
Copyright
Copyright © Materials Research Society 1994

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