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Electric current-induced abnormal Cu/γ-InSn4 interfacial reactions

Published online by Cambridge University Press:  03 March 2011

Sinn-wen Chen  and
Shih-kang Lin
Sinn-wen Chen*
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-chu, Taiwan 300
Shih-kang Lin
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-chu, Taiwan 300
*
a) Address all correspondence to this author. e-mail: swchen@che.nthu.edu.tw
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Abstract

The electromigration effect upon the γ-InSn4/Cu interfacial reactions have been studied by examining the γ-InSn4/Cu/γ-InSn4 couples annealed at 160 °C with and without current stressing. Scallop-type η-Cu6(Sn,In)5 phase layers are formed in the couples without current stressing and at the γ-InSn4/Cu interface where electrons are flowing from the γ-InSn4 to the Cu. The reaction path is Cu/η-Cu6(Sn,In)5/γ-InSn4. However, very large η-Cu6(Sn,In)5 compounds are found at the Cu/γ-InSn4 interface where electrons are from Cu to the γ-InSn4. Although the melting points of both γ-InSn4 and Cu are higher than 160 °C, the liquid phase is formed at 160 °C in the electrified couple at the downstream γ-InSn4 phase near the Cu/γ-InSn4 interface. The reaction path is Cu/η-Cu6(Sn,In)5/liquid/γ-InSn4. The liquid phase propagates along the grain boundaries of the γ-InSn4 matrix. The very large η-Cu6(Sn,In)5 compounds are the coupling results of the liquid phase penetration and the Cu transport enhancement due to electromigration.

Keywords

CuElectromigrationSoldering
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 12 , December 2006 , pp. 3065 - 3071
Copyright
Copyright © Materials Research Society 2006

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