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Electrical characterization of epitaxial FeSi2 nanowire on Si (110) by conductive-atomic force microscopy

Published online by Cambridge University Press:  31 January 2011

Shengde Liang  and
Brian A. Ashcroft
Shengde Liang*
Affiliation:
Department of Chemistry, Renmin University of China, Beijing 100872, China
Brian A. Ashcroft
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona 85287
*
a)Address all correspondence to this author. e-mail: sliang@ruc.edu.cn
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Abstract

We used conductive-atomic force microscopy (c-AFM) for electrical characterization of self-assembled epitaxial iron silicide nanowires (NWs) on Si (110). The NWs, 6 nm high by 10 nm wide and several micrometers long, were partially covered by a macro-gold-pad as one electrode. Another electrode is the conductive AFM tip. The resistance of a single FeSi2 NW was measured to be 29.7 kΩ, corresponding to a resistivity of 150 ± 30 μΩ·cm. A Schottky barrier formed between NWs and silicon substrate was clearly demonstrated, which offers electrical isolation for NWs. An equivalent circuit model based on the Schottky barrier was proposed and was correlated with measurement results. This simple electrical characterization approach may find wide applications for various one-dimensional nanostructures.

Keywords

NanostructureElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 2 , February 2010 , pp. 213 - 218
Copyright
Copyright © Materials Research Society 2010

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