Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2025-01-01T09:03:59.606Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical properties of Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si heterostructure prepared by sol-gel processing

Published online by Cambridge University Press:  01 July 2006

Hua Wang  and
Min-Fang Ren
Hua Wang*
Affiliation:
Department of Information Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China
Min-Fang Ren
Affiliation:
Department of Information Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China
*
a) Address all correspondence to this author. e-mail: wh65@gliet.edu.cn
Get access

Abstract

Low-temperature processing as low as 550–700 °C of Pt/SrBi2Ta2O9 (SBT)/Bi4Ti3O12 (BIT)/p-Si heterostructure has been performed by a sol-gel method. The effects of annealing temperature on current density, C-V characteristics, and memory windows of Pt/SBT/BIT/p-Si heterostructure were investigated. The SBT/BIT multilayer films were polycrystalline with no pyrochlore phase and no preferred orientation. The leakage current density was under 3 × 10−7 A/cm2 at 5 V with asymmetry hysteresis loops for Pt/SBT/BIT/p-Si heterostructure. Although all C-V curves showed clockwise ferroelectric hysteresis loops and the memory window reached a maximum of 0.78 V at a sweep voltage of 5 V, the memory window changed asymmetrically with the variation of annealing temperature and sweep voltage. The maximum memory window of Pt/SBT/BIT/p-Si heterostructure prepared at lower temperatures was narrower at lower sweep voltage. The asymmetric behavior of the C-V characteristics was discussed in terms of electron injection from Si and the ferroelectric polarization effect.

Keywords

Electrical propertiesFerroelectricSol-gel
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 7 , July 2006 , pp. 1782 - 1786
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Scott, J.F.: Ferroelectric memories today. Ferroelectrics 236, 247 (2000).CrossRefGoogle Scholar
2.Hirooka, G., Noda, M., Okuyama, M.: Proposal for a new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction. Jpn. J. Appl. Phys. 43, 2190 (2004).CrossRefGoogle Scholar
3.Chen, S-Y., Sun, C-L., Chen, S-B., Chin, A.: Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application. Appl. Phys. Lett. 80, 3168 (2002).CrossRefGoogle Scholar
4.Hou, Y., Xu, X-H., Wang, H., Wang, M., Shang, S-X.: Bi3.25La0.75Ti3O12 thin films prepared on Si (100) by metalorganic decomposition method. Appl. Phys. Lett. 78, 1733 (2001).CrossRefGoogle Scholar
5.Chen, T-C., Li, T-K., Zhang, X-B., Desu, S.B.: The effect of excess bismuth on the ferroelectric properties of SrBi2Ta2O9 thin films. J. Mater. Res. 12, 1569 (1997).CrossRefGoogle Scholar
6.Ryu, S.O., Joshi, P.C., Desu, S.B.: Low temperature processed 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories. Appl. Phys. Lett. 75, 2126 (1999).CrossRefGoogle Scholar
7.Sbbarao, E.C.: Crystal chemistry of mixed bismuth oxides with layer-type structure. J. Am. Ceram. Soc. 45, 166 (1962).CrossRefGoogle Scholar
8.Wang, H., Yu, J., Zhou, W-L., Wang, Y-B., Zheng, Y-K., Zhao, J-H.: Characteristics of Pb(Zr0.52Ti0.48)O3 thin films on p-Si with a buffer layer of Bi4Ti3O12 prepared by pulsed laser deposition. Jpn. J. Appl. Phys. 40, 1388 (2001).CrossRefGoogle Scholar
9.Park, B.H., Kang, B.S., Bu, S.D., Noh, T.W., Lee, J., Jo, W.: Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature 401, 682 (1999).CrossRefGoogle Scholar
10.Aizawa, K., Ishiwara, H.: Correlation between ferroelectricity and grain structures of face-to-face annealed strontium bismuth tantalate thin films. Jpn. J. Appl. Phys. 39, L1191 (2000).CrossRefGoogle Scholar
11.Kohno, A., Sakamoto, H., Matuo, K.: Crystallization and structural phase transformation in sub-100-nm-thick SrBi2Ta2O9 thin film. Jpn. J. Appl. Phys. 44, 1928 (2005).CrossRefGoogle Scholar
12.Wang, H., Ren, M-F.: Synthesis and ferroelectric properties of SrBi2Ta2O9/Bi4Ti3O12/p-Si multilayer thin films by sol-gel. J. Mater. Sci.–Mater. Electron. 17, 165 (2006).CrossRefGoogle Scholar
13.Wang, H.: Growth and polarization feature studies on rapid thermally processed preferentially c-axis-oriented Bi4Ti3O12 thin films on Si by sol-gel. Mater. Sci. Eng. B 111, 64 (2004).CrossRefGoogle Scholar
14.Blom, P.W.M., Wolf, R.M., Cillessen, J.F.M., Krijn, M.P.C.M.: Ferroelectric Schottky diode. Phys. Rev. Lett. 73, 2107 (1994).CrossRefGoogle ScholarPubMed
15.Wang, H., Ren, M.F.: Effects of oriented growth on properties of Ag/Bi4Ti3O12/p-Si heterostructure prepared by a sol-gel method with rapid thermal annealing techniques. J. Mater. Sci.– Mater. Electron. 16(4), 209 (2005).CrossRefGoogle Scholar