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Electrical Properties of Ultrathin Al2O3 Films Grown by Metalorganic Chemical Vapor Deposition for Advanced Complementary Metal-oxide Semiconductor Gate Dielectric Applications

Published online by Cambridge University Press:  01 June 2005

Spyridon Skordas ,
Filippos Papadatos ,
Steven Consiglio ,
Eric T. Eisenbraun ,
Alain E. Kaloyeros  and
Evgeni P. Gusev
Spyridon Skordas
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany—SUNY, Albany, New York 12203
Filippos Papadatos
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany—SUNY, Albany, New York 12203
Steven Consiglio
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany—SUNY, Albany, New York 12203
Eric T. Eisenbraun
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany—SUNY, Albany, New York 12203
Alain E. Kaloyeros*
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany—SUNY, Albany, New York 12203
Evgeni P. Gusev
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
*
a) Address all correspondence to this author. e-mail: akaloyeros@uamail.albany.edu
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Abstract

The electrical properties of ultrathin amorphous Al2O3 films, grown by low temperature metal-organic chemical vapor deposition from aluminum(III) 2,4-pentanedionate and water as co-reactants, were examined for potential applications as gate dielectrics in emerging complementary metal-oxide semiconductor technologies. High-frequency capacitance–voltage and current–voltage techniques were used to evaluate Al2O3 films deposited on silicon oxynitride on n-type silicon (100) substrates, with thickness ranging from 2.5 to 6.5 nm, as a function of postdeposition annealing regimes. Dielectric constant values ranging from 11.0 to11.5 were obtained, depending on the annealing method used. Metal-insulator-semiconductor devices were demonstrated with net equivalent oxide thickness values of 1.3 nm. Significant charge traps were detected in the as-deposited films and were mostly passivated by the subsequent annealing treatment. The main charge injection mechanism in the dielectric layer was found to follow a Poole–Frenkel behavior, with post-annealed films exhibiting leakage current an order of magnitude lower than that of equivalent silicon oxide films.

Keywords

AmorphousChemical vapor depositionElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 6 , June 2005 , pp. 1536 - 1543
Copyright
Copyright © Materials Research Society 2005

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