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Electromagnetic dispersion of surface plasmon polariton at the EG/SiC interface

Published online by Cambridge University Press:  02 October 2014

Biplob Kumar Daas  and
Amit Dutta
Biplob Kumar Daas*
Affiliation:
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, SC 29208, USA
Amit Dutta
Affiliation:
Department of Science, Noapara College, Jessore, Bangladesh 7460
*
a)Address all correspondence to this author. e-mail: Daas@email.sc.edu
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Abstract

We derive the dispersion relation of SiC substrate phonon-induced surface plasmon polariton (SPP) in epitaxial graphene (EG) grown on 4H–SiC, in SiC's restrahlen band (8–10 μm) by solving Maxwell equation in transverse magnetic mode. We also fabricated EG waveguide using photolithography and RIE etching for experimental study. Both theory and experimental data correlate in good agreement. Finally, we explain the viability of plasmonic device in EG both in theoretical and experimental point of view to explain electron–hole pair recombination. SPP formation finds application in nanophotonic devices for optical computing because of graphene's unique plasmonic properties. This can be applicable for high speed data switching in microprocessor and random access memory as well as optical interconnect in modern VLSI technology.

Keywords

plasmonpolaritondispersionepitaxial graphene
Type
Review
Information
Journal of Materials Research , Volume 29 , Issue 21 , 14 November 2014 , pp. 2485 - 2490
Copyright
Copyright © Materials Research Society 2014 

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References

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