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Electromigration and thermomigration behavior of flip chip solder joints in high current density packages

Published online by Cambridge University Press:  31 January 2011

D. Yang ,
Y.C. Chan ,
B.Y. Wu  and
M. Pecht
D. Yang
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong
Y.C. Chan*
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong
B.Y. Wu
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong
M. Pecht
Affiliation:
Center for Advanced Life Cycle Engineering (CALCE), University of Maryland, College Park, Maryland 20742
*
a)Address all correspondence to this author. e-mail: eeycchan@cityu.edu.hk
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Abstract

The electromigration and thermomigration behavior of eutectic tin-lead flip chip solder joints, subjected to currents ranging from 1.6 to 2.0 A, at ambient temperatures above 100 °C, was experimentally and numerically studied. The temperature at the chip side was monitored using both a temperature coefficient of resistance method and a thermal infrared technique. The electron wind force and thermal gradient played the dominant role in accelerated atomic migration. The atomic flux of lead due to electromigration and thermomigration was estimated for comparison. At the current crowding region, electromigration induced a more serious void accumulation as compared with thermomigration. Also, because of different thermal dissipations, a morphological variation was detected at different cross-sectional planes of the solder joint during thermomigration.

Keywords

DiffusionElectromigrationMicrostructure
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 9 , September 2008 , pp. 2333 - 2339
Copyright
Copyright © Materials Research Society 2008

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References

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