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Electromigration behavior of the Cu/Au/SnAgCu/Cu solder combination

Published online by Cambridge University Press:  31 January 2011

Tsung-Chieh Chiu  and
Kwang-Lung Lin
Tsung-Chieh Chiu*
Affiliation:
Department of Materials Science and Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
Kwang-Lung Lin
Affiliation:
Department of Materials Science and Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
*
a)Address all correspondence to this author. e-mail: longman@mail.mse.ncku.edu.tw
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Abstract

The electromigration behavior of the Cu/Au/SnAgCu/Cu combination was investigated under 103 A/cm2 of current stressing at ambient temperature. The Au layer, when it acts as a cathode, was consumed continuously, and no significant compound was found at the interface. Meanwhile, Cu6Sn5 was formed at the anodic Cu layer, and the thickness of the compound increased with increasing time. The Au atoms were found to be trapped in Cu6Sn5 within the solder matrix. The AuSn4 compound precipitated while attaching to Cu6Sn5 at the Cu6Sn5/solder interface. The thermomigration effect was found to be insignificant in this work as no obvious reaction occurred at the cathode/anode sides or in the solder matrix without current stressing.

Keywords

ElectromigrationCompound
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 1 , January 2008 , pp. 264 - 273
Copyright
Copyright © Materials Research Society 2008

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