Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-14T23:20:28.216Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial CoSi2 formation using an oxynitride buffer layer

Published online by Cambridge University Press:  31 January 2011

Jaesang Lee ,
Keunwoo Lee ,
Dongock Kim ,
Taeyong Park ,
Honggyu Kim  and
Hyeongtag Jeon
Jaesang Lee
Affiliation:
Division of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea
Keunwoo Lee
Affiliation:
Semiconductor R&D Division, Samsung Electronics Company, Yongin, Gyeonggi-Do 445-701, Korea
Hyeongtag Jeon*
Affiliation:
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
*
a) Address all correspondence to this author. e-mail: hjeon@hanyang.ac.kr
Get access

Abstract

We investigated the epitaxial growth of CoSi2 (100) on an Si (100) substrate using a modified oxide mediated epitaxy (OME) method to overcome the disadvantages of the OME method. These disadvantages are sensitivity of Co films to contamination by oxygen and the need for reiterating the film growth process to obtain thicker films. To solve these problems, nitrogen atoms were incorporated into chemically grown oxide (SiOx) by NH3 plasma treatment prior to the deposition of a Co film on the oxynitride buffer layer using the metal organic chemical vapor deposition (MOCVD) method. Subsequently, ex situ rapid thermal annealing was performed to grow Co-silicide at a temperature between 400 °C and 700 °C for 1 min. The results show that the diffusion of Co was effectively controlled by the oxynitride buffer layer without the formation of additional SiOx in between Co and Si. Our findings indicate that by using an oxynitride buffer layer, CoSi2 films can be grown epitaxially despite the fact that the initial Co film was exposed to oxygen.

Keywords

CoCrystal growthEpitaxy
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 8 , August 2009 , pp. 2705 - 2710
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Muraka, S.P.: Silicide thin films and their applications in microelectronics. Intermetallics 3, 173 (1995).CrossRefGoogle Scholar
2Taur, Y. and Ning, T.H.: Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, 1998), p. 243.Google Scholar
3Gamnino, J.P. and Colgan, E.G.: Silicides and ohmic contacts. Mater. Chem. Phys. 52, 99 (1998).CrossRefGoogle Scholar
4Pretorius, R. and Mayer, J.W.: Silicide formation by concentration controlled phase selection. J. Appl. Phys. 81, 2448 (1997).CrossRefGoogle Scholar
5Kwon, Y. and Lee, C.: Comparison of epitaxial growth of CoSi2 among Co/Ti, Co/Hf, and Co/Nb bilayers on (100) Si. Thin Solid Films 380, 127 (2000).CrossRefGoogle Scholar
6Hashimoto, S., Egashira, K., Tanaka, T., Etoh, R., and Hata, Y.: Epitaxial silicide formation on recoil-implanted substrates. J. Appl. Phys. 97, 024911 (2005).CrossRefGoogle Scholar
7Fitz, C., Goldbach, M., Dupont, A., and Schmidbauer, S.: Silicides as contact material for DRAM applications. Microelectron. Eng. 82, 460 (2005).CrossRefGoogle Scholar
8Vantomme, A., Nicolet, M A., and Theodore, N.D.: Epitaxial CoSi2 films on Si(100) by solid-phase reaction. J. Appl. Phys. 75, 3882 (1994).CrossRefGoogle Scholar
9Jones, E.C., Cheung, N.W., and Fraser, D.B.: Low-temperature processing of shallow junctions using epitaxial and polycrystalline CoSi2. J. Electron. Mater. 24, 863 (1995).CrossRefGoogle Scholar
10Kim, G.B., Kwak, J.S., Baik, H.K., and Lee, S. Man: Effect of Ti-capping thickness on the formation of an oxide-interlayermediated-epitaxial CoSi2 film by ex situ annealing. J. Appl. Phys. 85, 1503 (1999).CrossRefGoogle Scholar
11Liu, J.F., Feng, J.Y., and Zhu, J.: Growth of epitaxial CoSi2 films on Si (100) substrates through direct solid phase reaction between crystalline Co films and Si substrates. J. Cryst. Growth 218, 272 (2000).CrossRefGoogle Scholar
12Jimenez, J.R., Schowalter, L.J., Hsiung, L.M., Rajan, K., Hashimoto, S., Thomson, R.D., and Iyer, S.S.: Growth of CoSi2 on Si (001): Structure, defects, and resistivity. J. Vac. Sci. Technol., A 8, 3014 (1990).CrossRefGoogle Scholar
13Lieuwma, C.W.T. Bulle, Ommen, A.H. van, Hornstra, J., and Aussems, N.A.M.: Observation and analysis of epitaxial growth of CoSi2 on (100) Si. J. Appl. Phys. 71, 2211 (1992).CrossRefGoogle Scholar
14Detavernier, C., Meirhaeghe, R.L. Van, Cardon, F., Donaton, R.A., and Maex, K.: CoSi2 formation in the presence of interfacial silicon oxide. Appl. Phys. Lett. 74, 2930 (1999).CrossRefGoogle Scholar
15Lawrence, M., Dass, A., Fraser, D.B., and Wei, C S.: Growth of epitaxial CoSi2 on (100) Si. Appl. Phys. Lett. 58, 1308 (1991).Google Scholar
16Chong, R.K.K., Yeadon, M., Choi, W.K., Stach, E.A., and Boothroyd, C.B.: Nitride-mediated epitaxy of CoSi2 on Si(001). Appl. Phys. Lett. 82, 1833 (2003).CrossRefGoogle Scholar
17Tung, R.T.: Oxide mediated epitaxy of CoSi2 on silicon. Appl. Phys. Lett. 68, 3461 (1996).CrossRefGoogle Scholar
18Byun, J.S., Seon, J.M., Park, J.W., Hwang, H., and Kim, J.J.: Defect generation during epitaxial growth of CoSi2 on miniature sized (100) Si substrate and its effect on electrical properties, in Silicide Thin Films—Fabrication, Properties, and Applications, edited by Tung, R.T., Maex, K., Pellegrini, P.W., and Allen, L.H. (Mater. Res. Soc. Symp. Proc. 402, Warrendale, PA, 1996), p. 167.Google Scholar
19Detavernier, C., Meirhaeghe, R.L. Van, Cardon, F., and Maex, K.: CoSi2 formation through SiO2. Thin Solid Films 386, 19 (2001).CrossRefGoogle Scholar
20Ohmi, S. and Tung, R.T.: Oxide mediated epitaxial growth of CoSi2 in a single deposition step, in Advanced Interconnects and Contacts, edited by Edelstein, D.C., Kikkawa, T., Öztürk, M.C., Tu, KN., and Weitzman, E.J. (Mater. Res. Soc. Symp. Proc. 564, Warrendale, PA, 1999), p. 117.Google Scholar
21Uematsu, M., Kageshima, H., and Shiraishi, K.: Effect of nitrogen on diffusion in silicon oxynitride. Jpn. J. Appl. Phys. 44, 7756 (2005).CrossRefGoogle Scholar
22Lu, H.C., Gustafsson, E.P., and Garfunkel, E.: Effect of nearinterfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides. J. Appl. Phys. 81, 6992 (1997).CrossRefGoogle Scholar
23Ishizaka, A. and Shiraki, Y.: Low temperautre surface cleaning of silicon and its application to silicon MBE. J. Electrochem. Soc. 133, 666 (1986).CrossRefGoogle Scholar
24Stadler, R., Podloucky, R., Kresse, G., and Hafner, J.: Ab initio studies of the (100), (110), and (111) surfaces of CoSi2. Phys. Rev. B 57, 4088 (1998).CrossRefGoogle Scholar
25Hsia, S.L., Tan, T.Y., Smith, P., and McGuire, G.E.: Formation of epitaxial CoSi2 films on (001) silicon using Ti-Co alloy and bimetal source materials. J. Appl. Phys. 70, 7579 (1991).CrossRefGoogle Scholar