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Epitaxial growth at PZT/Ir interface

Published online by Cambridge University Press:  31 January 2011

Kumi Okuwada ,
Ken-ichi Yoshida ,
Tomoko Saitou  and
Atsuhito Sawabe
Kumi Okuwada
Affiliation:
Process & Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-8522, Japan
Ken-ichi Yoshida
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Setagaya, Tokyo 157–8572, Japan
Tomoko Saitou
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Setagaya, Tokyo 157–8572, Japan
Atsuhito Sawabe
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Setagaya, Tokyo 157–8572, Japan
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Abstract

Surface oxidation of an iridium film and the possibility of epitaxial growth of PZT spin-coated film on sputtered iridium were investigated. The free surface on the iridium film oxidized over 400 °C with random orientation. Nevertheless, both the PZT(111)/Ir(111) and PZT(100)/Ir(100) interfaces were realized using the highly oriented iridium layer. These results suggest that PZT nucleation has priority over iridium surface oxidation.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 12 , December 2000 , pp. 2667 - 2671
Copyright
Copyright © Materials Research Society 2000

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References

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