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Epitaxial growth of ZnO films on Si(111)

Published online by Cambridge University Press:  31 January 2011

Ashutosh Tiwari ,
M. Park ,
C. Jin ,
H. Wang ,
D. Kumar  and
J. Narayan
Ashutosh Tiwari
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
M. Park
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
C. Jin
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
H. Wang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
D. Kumar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
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Abstract

In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to the substrate. Films with AlN and GaN buffer layers were epitaxial with preferred in-plane orientation, while those directly grown on Si(111) were found to have random in-plane orientation. A decrease in the frequency of the Raman mode and a red shift of the band-edge photoluminescence peak due to the presence of tensile strain in the film, was observed. Various possible sources for the observed biaxial strain are discussed.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 17 , Issue 10 , October 2002 , pp. 2480 - 2483
Copyright
Copyright © Materials Research Society 2002

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