Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-10T22:15:58.476Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence for self-organization processes in PbTe-Bi2Te3 semiconductor solid solutions

Published online by Cambridge University Press:  29 June 2011

Elena Rogacheva ,
Olga Vodorez ,
Vladimir Pinegin  and
Olga Nashchekina
Elena Rogacheva*
Affiliation:
Theoretical & Experimental Physics Department, National Technical University “Kharkov Polytechnic Institute,” 61002 Kharkov, Ukraine
Olga Vodorez
Affiliation:
Theoretical & Experimental Physics Department, National Technical University “Kharkov Polytechnic Institute,” 61002 Kharkov, Ukraine
Vladimir Pinegin
Affiliation:
Theoretical & Experimental Physics Department, National Technical University “Kharkov Polytechnic Institute,” 61002 Kharkov, Ukraine
Olga Nashchekina
Affiliation:
Theoretical & Experimental Physics Department, National Technical University “Kharkov Polytechnic Institute,” 61002 Kharkov, Ukraine
*
a)Address all correspondence to this author. e-mail: rogacheva@kpi.kharkov.ua
Get access

Abstract

The dependences of unit cell parameter, x-ray diffraction line width B, and microhardness H on the composition of PbTe-Bi2Te3 (0–10 mol% Bi2Te3) semiconductor alloys, subjected to different types of heat treatment, were obtained. In the concentration ranges ∼0.5–1.5 and 3–4 mol% Bi2Te3 within the homogeneity region of PbTe (0–6 mol% Bi2Te3), anomalous constancy or decrease in B and H was observed. A long room temperature aging leads to a more distinct manifestation of these effects. It is suggested that the observed peculiarities in the concentration dependences of the properties are connected with percolation effects and self-organization processes in the solid solution.

Keywords

Chemical substitutionX-ray diffractionInteratomic arrangements
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 13 , 14 July 2011 , pp. 1627 - 1633
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Rogacheva, E.I.: Concentration-dependent microhardness in semiconductor solid solutions. Izv. Akad. Nauk. SSSR. Neorgan. Mater. 25, 754 (1989).Google Scholar
2.Rogacheva, E.I., Sinelnik, N.A., and Nashchekina, O.N.: Concentration anomalies of properties in Pb(1-x)Ge(x)Te solid solutions. Acta Phys. Pol. A 84, 729 (1993).CrossRefGoogle Scholar
3.Rogacheva, E.I., Krivulkin, I.M., Popov, V.P., and Lobkovskaya, T.A.: Concentration dependences of properties in Pb1-xMnxTe solid solutions. Phys. Status Solidi A. 148, K65 (1995).Google Scholar
4.Rogacheva, E.I., Sologubenko, A.S., and Krivulkin, I.M.: Microhardness of Pb1-xMnxTe semimagnetic solid solutions. Inorg. Mater. 34, 545 (1998).Google Scholar
5.Rogacheva, E.I. and Krivulkin, I.M.: Isotherms of thermal conductivity in PbTe-MnTe solid solutions. Fiz. Tverd. Tela. 43, 1000 (2001).Google Scholar
6.Rogacheva, E.I. and Krivulkin, I.M.: The temperature and concentration dependences of the charge carrier mobility in PbTe-MnTe solid solutions. Semiconductors 36, 966 (2002).CrossRefGoogle Scholar
7.Rogacheva, E.I.: Self-organization processes in impurity subsystem of solid solutions. J. Phys. Chem. Solids 64, 1579 (2003).CrossRefGoogle Scholar
8.Rogacheva, E.I.: Critical phenomena in heavily-doped semiconducting compounds. Jpn. J. Appl. Phys. 32. Suppl. 32-3, 775 (1993).Google Scholar
9.Stauffer, D. and Aharony, A.: Introduction to Percolation Theory (Taylor & Francis, Washington, DC, 1992), pp. 127–134.Google Scholar
10.Gorne, G.V., Zhigareva, N.K., Ivanova, A.B., and Rogacheva, E.I.: Chemical interaction in SnTe-based solid solutions in the Sn-In-Te system. Izv. AN. SSSR. Neorg. Mater. 23, 1152 (1987).Google Scholar
11.Gorne, G.V., Zhigareva, N.K., Ivanova, A.B., and Rogacheva, E.I.: X-ray study of the solid solutions based on SnTe in the Sn-Bi-Te system. Izv. AN. SSSR. Neorg. Mater. 24, 1214 (1988).Google Scholar
12.Gorne, G.V., Zhigareva, N.K., Ivanova, A.B., and Rogacheva, E.I.: X-ray study of the mechanism of formation of solid solution based on tin telluride. Izv. AN. SSSR. Neorg. Mater. 25, 955 (1989).Google Scholar
13.Rogacheva, E.I., Gorne, G.V., Zhigareva, N.K., and Ivanova, A.B.: Influence of thermal treatment on the solubility of indium in tin monotelluride. Inorg. Mater. 27, 198 (1991).Google Scholar
14.Rogacheva, E.I.: The specificity of structure and electrical behavior of multinary solid solutions formed by chemical compounds. Phys. Status Solidi C. 6, 1307 (2009).CrossRefGoogle Scholar
15.Fano, V.: Lead telluride and its alloys. In: CRC Handbook of Thermoelectrics, edited by Rowe, D.M. (CRC Press, Boca Raton, 1995), p. 257.Google Scholar
16.Lyubchenko, A.V., Sal’kov, E.A., and Sizov, F.F.: Physical Foundations of Semiconductor Infrared Photoelectronics. (Naukova Dumka, Kiev, 1984), p. 254 [in Russian].Google Scholar
17.Abrikosov, N.Kh. and Shelimova, L.E.: Semiconducting Materials Based on A4B6 Compounds. (Nauka, Moscow, 1975), p. 195 [in Russian].Google Scholar
18.Rogacheva, E.I. and Lyubchenko, S.G.: Thermoelectric and mechanical properties of lead telluride doped with bismuth. J. Thermoelectricity 3, 24 (2005).Google Scholar
19.Tavrina, T.V., Rogacheva, E.I., and Pinegin, V.I.: Structural, thermoelectric and galvanomagnetic properties of PbTe-BiTe semiconductor solid solutions. Mold. J. Phys. Sci. 4, 430 (2005).Google Scholar
20.Rogacheva, E.I., Laptev, S.A., Ploskaya, V.S., and Efimova, B.A.: PbTe based solid solutions in the Pb-Bi-Te system. Izv. Akad. Nauk. SSSR. Neorgan. Mater. 20, 1350 (1984).Google Scholar
21.Goltsman, B.M., Kudinov, B.A., and Smirnov, I.A.: Bi2Te3 - Based Semiconducting Thermoelectric Materials. (Nauka, Moscow, 1972), p. 320 [in Russian].Google Scholar
22.Shelimova, L.E., Karpinskii, O.G., Konstantinov, P.P., Avilov, E.S., Kretova, M.A., Nikhezina, I.Yu., and Zemskov, V.S.: Thermoelectric materials based on intermediate phases in the systems formed by lead and bismuth chalcogenides. Perspektivnye. Materialy. 5, 5 (2009).Google Scholar
23.Golovanova, N.S., Zlomanov, V.P., Tananaeva, O.I., and Licheva, L.D.: Doping lead telluride crystals with bismuth during growth. Izv. Akad. Nauk. SSSR. Neorgan. Mater. 20, 574 (1984).Google Scholar
24.Suzuki, T., Yoshinaga, H., and Takeuchi, S.: Dislocation Dynamics and Plasticity (Mir, Moscow, 1989), pp. 78–85.Google Scholar
25.Umanskii, Ya.S.: X-Ray Study of Metals and Semiconductors (Metalurgiya, Moscow, 1969), p. 38.Google Scholar
26.Shklovskii, B.I. and Efros, A.L.: Electronic Properties of Doped Semiconductors (Springer-Verlag, New York, 1984).CrossRefGoogle Scholar