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Examining pressure-induced phase transformations in silicon by spherical indentation and Raman spectroscopy: A statistical study

Published online by Cambridge University Press:  01 October 2004

Tom Juliano ,
Vladislav Domnich  and
Yury Gogotsi
Tom Juliano
Affiliation:
A.J. Drexel Nanotechnology Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104
Vladislav Domnich
Affiliation:
A.J. Drexel Nanotechnology Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104
Yury Gogotsi*
Affiliation:
A.J. Drexel Nanotechnology Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104
*
a) Address all correspondence to this author. e-mail: gogotsi@drexel.edu
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Abstract

Unloading rate and maximum load have been previously shown to affect the response of silicon to sharp indentation, but no such study exists for spherical indentation. In this work, a statistical analysis of over 1900 indentations made with a 13.5-μm radius spherical indenter on a single-crystal silicon wafer over a range of loads (25–700 mN) and loading/unloading rates (1–30 mN/s) is presented. The location of “pop-in” and “pop-out” events, most likely due to pressure-induced phase transformations, is noted, as well as pressures at which they occur. Multiple occurrences of pop-in and pop-out events are reported. Raman micro-spectroscopy shows a higher intensity of metastable silicon phases at some depth under the surface of the residual impression, where the highest shear stresses are present. A stability range for Si-II is demonstrated and compared with previous results for Berkovich indentation.

Keywords

Raman spectroscopyIndentationPhase transformation
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 10 , October 2004 , pp. 3099 - 3108
Copyright
Copyright © Materials Research Society 2004

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References

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