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Excimer laser-assisted etching of polysilicon at 193 nm

Published online by Cambridge University Press:  31 January 2011

M. D. Armacost ,
S. V. Babu ,
S. V. Nguyen  and
J. F. Rembetski
M. D. Armacost
Affiliation:
Becton-Dickinson Vacutainer Systems, Rutherford, New Jersey 07070
S. V. Babu
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, New York 13676
S. V. Nguyen
Affiliation:
IBM General Technology Division, Essex Junction, Vermont 05452
J. F. Rembetski
Affiliation:
IBM General Technology Division, Essex Junction, Vermont 05452
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Abstract

Excimer laser-assisted etching of polysilicon at 193 nm was studied in the presence of CF3Br, CF2Cl2, and NF3. In the presence of 193 nm radiation, CF3Br showed some propensity to etch polysilicon, while CF2Cl2 did not show any appreciable etching. In the presence of NF3, maximum etch rates of 0.6 Å/pulse were obtained for pressures greater than 500 Torr and fluences exceeding 200 mJ/(cm2 pulse). The etch rate increased with both fluences and pressure to a limiting value of 0.6 Å/pulse. An adsorptive etch mechanism was proposed, where NF3 molecules diffuse to the surface, adsorb, and then react after absorbing laser radiation. Thermal effects enhance this process and appear to dominate at lower pressures (<400 Torr) and higher fluences. Etching caused by the gas phase formation of F atoms is minimal due to the low absorption cross section of NF3 at 193 nm. Etching of submicron profiles in polysilicon was also examined. Polysilicon samples masked by patterned SiO2 were exposed to NF3 and 193 nm ArF radiation. Subsequent scanning electron microscopy (SEM) analysis demonstrated directional etching with some surface roughening.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 6 , December 1987 , pp. 895 - 901
Copyright
Copyright © Materials Research Society 1987

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References

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