Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-28T16:00:48.325Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication and characterization of ferroelectric Pb(ZrxTi1–x)O3 thin films by metalorganic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Han Sang Song ,
Tae Song Kim ,
Chang Eun Kim  and
Hyung Jin Jung
Han Sang Song
Affiliation:
Department of Ceramic Engineering, Yonsei University, Seoul, Korea
Tae Song Kim*
Affiliation:
Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-ku, Seoul, 136-791, Korea
Chang Eun Kim
Affiliation:
Department of Ceramic Engineering, Yonsei University, Seoul, Korea
Hyung Jin Jung
Affiliation:
Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-ku, Seoul, 136-791, Korea
*
a)Address all correspondence to this author.
Get access

Abstract

Ferroelectric Pb(Zr, Ti)O3 (PZT) thin films were grown on Pt/Ti/SiO2/Si, RuO2/Pt/Ti/SiO2/Si, and Pt/MgO substrates at the substrate temperature of 600 °C by the metalorganic chemical vapor deposition (MOCVD) method. Pb(C11H19O2)2(Pb(DPM)2), Ti(OiC3H7)4, and Zr(OtC4H9)4 as source material and Ar and O2 as a carrier gas and oxidizing agent were selected, respectively. In order to investigate the effect of Zr and Ti component changes on the growth aspect of PZT thin films, Zr and Ti source materials were varied by controlling Zr and Ti flow rate. From the Rutherford backscattering spectroscopy (RBS) measurement, it was confirmed that the composition of the films, particularly Pb content, changed with the increasing Zr flow rate. In addition, the x-ray diffraction (XRD) spectra analysis showed the existence of a Pb-deficient pyrochlore phase as well as ZrO2 as a secondary phase. From these results, it is believed that the higher Zr partial pressure in the gas phase reduces the sticking of the Pb precursor to the substrate. The film with Pb:Zr:Ti = 1:0.42:0.58 showed a dielectric constant of 816 at 1 MHz. The spontaneous polarization, remanent polarization, and coercive field measured from the RT66A by applying 3.5 V were 44.1 μC/cm2, 24.4 μC/cm2, and 59.6 kV/cm, respectively. The fatigue analysis of PZT thin films with Pb:Zr:Ti = 1:0.42:0.58 at an applied voltage of Vp-p = 5.4 V showed 40% degradation on the basis of initial polarization value after 109 cycles.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 2 , February 1999 , pp. 487 - 493
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Okamoto, K., Nasu, Y., Okuyama, M., and Hamaka, Y., Jpn. J. Appl. Phys. Suppl. 20–1, 215 (1981).CrossRefGoogle Scholar
2.Matsui, Y., Okuyama, M., Noda, M., and Hamakawa, Y., Appl. Phys. Lett. A28, 161 (1982).Google Scholar
3.Crrano, J., Sudhama, C., Lee, J., Tasch, A., and Miller, W., Int. Electron Devices Meeting, IEDM Tech. Dig., Washington, DC (IEEE, New York, 1989), p. 255Google Scholar
4.Scott, J. F. and Paz Araujo, C. A., Science 246, 1400 (1989).CrossRefGoogle Scholar
5.Kim, T. S., Kim, D. J., Lee, J. K., and Jung, H. J., in Ferroelectric Thin Films V, edited by Desu, S. B., Ramesh, R., Tuttle, B. A., Jones, R. E., and Yoo, I. K. (Mater. Res. Soc. Symp. Proc. 433, Pittsburgh, PA, 1996), p. 243.Google Scholar
6.Ramesh, R., Inam, A., Chan, W. K., Tillerot, F., Wikens, B., Chang, C. C., Sands, T., Tarascon, J. M., and Keramidas, V. G., Appl. Phys. Lett. 59 (27), 3542 (1991).CrossRefGoogle Scholar
7.Tuttle, B. A., Headley, T. J., Bunker, B. C., Schwartz, R. W., Zender, T. J., Hernandez, C.L., Goodnow, D. C., Tissot, R. J., and Michael, J., J. Mater. Res. 7, 1876 (1992).CrossRefGoogle Scholar
8.Dormans, G. J. M., Larsen, P. K., Spierings, G. A. C. M., Dikken, J., Ulenaers, M. J. E., Cuppens, R., Taylor, D.J., and Verhaar, R. D. J., Int. Ferroelectrics 6, 93 (1995).CrossRefGoogle Scholar
9.Kashihira, K., Itoh, H., Tsukamato, K., and Akasaka, Y., in Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, Japan (Business Center for Acad. Soc. Japan, Tokyo, Japan, 1991), p. 192.Google Scholar
10.Francombe, M. H., Thin Solid Films 13, 413 (1972).CrossRefGoogle Scholar
11.Okazaki, K. and Nagata, K., J. Am. Ceram. Soc. 56, 82 (1973).CrossRefGoogle Scholar
12.Eichorstand, D. J. and Baron, C.J., in Ferroelectric Thin Films III, edited by Myer, E. R., Tuttle, B. A., Desu, S. B., and Larsen, P. K. (Mater. Res. Soc. Symp. Proc. 310, Pittsburgh, PA, 1993), p. 201.Google Scholar