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Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor

Published online by Cambridge University Press:  31 January 2011

Young Hwan Hwang ,
Seok-Jun Seo  and
Byeong-Soo Bae
Byeong-Soo Bae*
Affiliation:
Laboratory of Optical Materials and Coating (LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
*
a)Address all correspondence to this author. e-mail: bsbae@kaist.ac.kr
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Abstract

Thin-film transistors (TFTs) with zinc oxide channel layers were fabricated through a simple and low-cost solution process. Precursor solution concentration, annealing temperature, and the process were controlled for the purpose of improving the electrical properties of ZnO TFTs and analyzed in terms of microstructural scope. The fabricated ZnO films show preferential orientation of the (002) plane, which contributes to enhanced electron conduction and a dense surface. The results show that the TFT characteristics of the film are clearly affected by the microstructure. The optimized TFT operates in a depletion mode, shows n-type semiconductor behavior, and is highly transparent (>90%) within the visible light range. It exhibits a channel mobility of 9.4 cm2/V·s, a subthreshold slope of 3.3 V/decade, and an on-to-off current ratio greater than 105. In addition, the result of N2 annealing shows the possibility of improvement in electrical property of the ZnO TFTs.

Keywords

Sol-gelZnSemiconducting
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 4 , April 2010 , pp. 695 - 700
Copyright
Copyright © Materials Research Society 2010

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