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Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

Published online by Cambridge University Press:  31 January 2011

Meng Chen ,
Yuehui Yu ,
Xi Wang ,
Xiang Wang ,
Jing Chen ,
Xianghua Liu  and
Yeming Dong
Meng Chen*
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China, and Shanghai Simgui Technology Co., Ltd., 200 Puhui Jiading, Shanghai 201821, People's Republic of China
Yuehui Yu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China, and Shanghai Simgui Technology Co., Ltd., 200 Puhui Jiading, Shanghai 201821, People's Republic of China
Xi Wang
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China, and Shanghai Simgui Technology Co., Ltd., 200 Puhui Jiading, Shanghai 201821, People's Republic of China
Xiang Wang
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Jing Chen
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Xianghua Liu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Yeming Dong
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
*
a)Address all correspondence to this author. e-mail: mchen@itsvr.sim.ac.cn
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Abstract

In this article, we report formation of separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) materials with doses ranging from (2.5 to 13.5) × 1017 cm−2 at acceleration energies of 70–160 keV and subsequent annealing at temperatures over 1300 °C in oxygen + argon atmosphere for 5 h. The microstructure evolution of SIMOX wafers was characterized by Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, high-resolution transmission electron microscopy, Secco, and Cu-plating. This study revealed a series of good matches of dose-energy combination at acceleration energies of 70–160 keV with doses of (2.5–5.5) × 1017 cm−2, in which SIMOX wafers had good crystallinity of the top silicon, sharp Si/SiO2 interfaces, high-integrity buried oxide layers with low pinhole density, and low detectable silicon islands. Furthermore, the higher the oxygen dose, the higher the implanted energy required for the formation of a buried oxide free from Si islands. The mechanism of the optimum dose-energy match is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 7 , July 2002 , pp. 1634 - 1643
Copyright
Copyright © Materials Research Society 2002

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