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Fabrication, structure, and performance of a microfabricated gallium electrical switch contact

Published online by Cambridge University Press:  26 August 2011

Yoonkap Kim
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164-2920
Julia A. Reid
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164-2920
David F. Bahr*
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164-2920
*
a)Address all correspondence to this author. e-mail: dbahr@wsu.edu
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Abstract

A contact for a micromechanical switch has been fabricated using electroplated gallium (Ga) on silicon to create an electrical switch contact that can be annealed to recover its original properties after mechanical damage. The resistivity of the electroplated Ga appears to be similar to pure Ga. The resistance increased with cycling but recovered to the original value after a thermal reflow process at 120 °C for 10 min. The hardness of thermally reflowed Ga droplets was 2 MPa when the droplets were unconstrained and was up to 95 MPa for constrained droplets, suggesting that all switching in this study caused permanent deformation at room temperature and that defects formed during plastic deformation are likely candidates for the increased resistance during cycling. Up to 300 switching cycles were investigated for contacts involving up to four Ga droplets to measure contact behavior under high-current and load-switching applications. Oxidation behavior was characterized for the thermal reflow process on the Ga droplets, suggesting a passivating 30-nm oxide form at 100 °C, and electrical contact resistance nanoindentation suggests the oxide breaks during mechanical contact.

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Articles
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1.Witvrouw, A., Tilmans, H.A.C., and De Wolf, I.: Materials issues in the processing, the operation and the reliability of MEMS. Microelectron. Eng. 76, 245 (2004).CrossRefGoogle Scholar
2.Petersen, K.: Silicon as a mechanical material. Proc. IEEE 70, 420 (1982).CrossRefGoogle Scholar
3.Roy, S. and Mehregany, M.: Fabrication of electrostatic nickel microrelays by nickel surface micromachining, in IEEE MEMS’ Proc. - Amsterdam, Netherlands, January–February 1995, pp. 353357.Google Scholar
4.Hashimoto, E., Uenishi, Y., and Watabe, A.: Thermally controlled magnetization microrelay, in Proc. Int. Conf. Solid-State Sensors and Actuators, June 25–29, 1995, pp. 361364.Google Scholar
5.Kim, J., Shen, W., Latorre, L., and Kim, C.J.: A micromechanical switch with electrostatically driven liquid-metal droplet. Sens. Actuators, A. 9798, 672 (2002).CrossRefGoogle Scholar
6.Simon, J., Saffer, S., and Kim, C.J.: A micromechanical relay with thermally driven mercury micro-drop, in IEEE MEMS’ 96 Proc. - San Diego, CA, 1996, p. 515.Google Scholar
7.Chen, L., Lee, H., Guo, Z.J., McGruer, N.E., Leedy, K.D., and Adams, G.G.: Contact resistance study of noble metals and alloy films using a scanning probe microscope test station. J. Appl. Phys. 102, 074910 (2007).CrossRefGoogle Scholar
8.Bannuru, T., Brown, W.L., Narksitipan, S., and Vinci, R.P.: The electrical and mechanical properties of Au-V and Au-V2O5 thin films for wear-resistant RF MEMS switches. J. Appl. Phys. 103, 083522 (2008).CrossRefGoogle Scholar
9.Hyman, D. and Mehregany, M.: Contact physics of gold microcontacts for MEMS switches. IEEE Trans. Compon. Packag. Technol. 22, 357 (1999).CrossRefGoogle Scholar
10.Angus, H.: Surface films on precious-metal contacts. Br. J. Appl. Phys. 13, 58 (1962).CrossRefGoogle Scholar
11.Machate, M.S.: Joule heat effects on reliability of RF MEMS switches. Master Thesis in Worcester Polytechnic Institute (2003).Google Scholar
12.Kim, J-M., Lee, S., Baek, C-W., Kwon, Y., and Kim, Y-K.: Cold-and hot-switching lifetime charaterization of ohmic-contact RF MEMS swithes. IEICE Electron. Expr. 5, 418 (2008).CrossRefGoogle Scholar
13.Weiss, L.W., Cho, J.H., McNeil, K.E., Richards, C.D., Bahr, D.F., and Richards, R.F.: Characterization of a dynamic micro heat engine with integrated thermal switch. J. Micromech. Microeng. 16, S262 (2006).CrossRefGoogle Scholar
14.Taylor, L.T., Rancourt, J., and Perry, C.V.: Electrical switches and sensors which use a non-toxic liquid metal composition. U.S. patent 5478978 (1995).Google Scholar
15.Huang, J.B., Fei, G.T., Shui, J.P., Cui, P., and Wang, Y.Z.: Preparation and internal friction of nanoscale gallium droplets. Phys. Status. Solidi. A 194, 167 (2002).3.0.CO;2-D>CrossRefGoogle Scholar
16.Truong, T.D.: Selective deposition of micro scale liquid gallium alloy droplets. MS Thesis, University of California Los Angeles (2000).Google Scholar
17.Sundararajan, S. and Bhat, T.R.: The electrodeposition of gallium from a chloride bath. J. Less. Common Met. 11, 360 (1966).CrossRefGoogle Scholar
18.Sheka, I.A., Chaus, I.S., and Mityureva, T.T.: The Chemistry of Gallium (Elsevier, New York, 1966).Google Scholar
19.Chen, P.Y., Lin, Y.F., and Sun, I. W.: Electrochemistry of gallium in the Lewis acidic aluminum chloride-1-methyl-3-ethylimidazolium chloride room-temperature molten salt. J. Electrochem. Soc. 146(9), 3290 (1999).CrossRefGoogle Scholar
20.Regan, M.J., Tostmann, H., and Pershan, P.S.: X-ray study of the oxidation of liquid-gallium surfaces. Phys. Rev. B 55(16), 10786 (1997).CrossRefGoogle Scholar
21.Dai, Z. R., Pan, Z. W., and Wang, Z. L.: Gallium oxide nanoribbons and nanosheets. J. Phys. Chem. B. 106(5), 902 (2002).CrossRefGoogle Scholar
22.Ortiz, A., Alonso, J. C., Andrade, E., and Urbiola, C.: Structural and optical characteristics of gallium oxide thin films deposited by ultrasonic spray pyrolysis. J. Electrochem. Soc. 148(2), F26 (2001).CrossRefGoogle Scholar
23.Shan, F.K., Liu, G.X., Lee, W.J., Lee, G.H., Kim, I.S., and Shin, B.C.: Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition. J. Appl. Phys. 98, 023504 (2005).CrossRefGoogle Scholar
24.Rotter, T., Ferretti, R., Mistele, D., Fedler, F., Klausing, H., Stemmer, J., Semchinova, O. K., Aderhold, J., and Graul, J.: Electrical properties of photoanodically generated thin oxide films on n-GaN. J. Cryst. Growth 230, 602 (2001).CrossRefGoogle Scholar
25.Chabala, J.M.: Oxide-growth kinetics and fractal-like patterning across liquid gallium surfaces. Phys. Rev B. 46(18), 11346 (1992).CrossRefGoogle ScholarPubMed
26.Oliver, W.C. and Pharr, G.M.: An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7, 1564 (1992).CrossRefGoogle Scholar
27.Meyers, M.A. and Chawla, K.K.: Mechanical Metallurgy Principles and Applications (Prentice Hall, NJ, USA, 1984).Google Scholar
28.Timsit, R.S.: Electrical contact resistance: Properties of stationary interfaces. IEEE Trans. Compon. Packag. Technol. 22, 85 (1999).CrossRefGoogle Scholar
29.Askeland, D.R.: The Science and Engineering of Materials, 3rd ed. (PWS Publishing Company, Boston, MA, 1998).Google Scholar
30.Wheeler, A.J. and Ganji, A.R.: Introduction to Engineering Experimentation. (Prentice Hall, Englewood Cliffs, NJ, 1996), p. 160.Google Scholar
31.Yazdanpanah, M.M., Chakraborty, S., Harfenist, S.A., Cohn, R.W., and Alphenaar, B.W.: Formation of highly transmissive liquid metal contacts to carbon nanotubes. Appl. Phys. Lett. 85, 3564 (2004).CrossRefGoogle Scholar
32.Dickrell, D.J. and Dugger, M.T.: Electrical contact resistance degradation of a hot-switched simulated metal MEMS contact. IEEE Trans. Compon. Packag. Technol. 30, 75 (2007).CrossRefGoogle Scholar
33.Neufeld, C.N. and Rieder, W.F.: Electrical characteristics of various contact contaminations. IEEE Trans. Compon. Packag. Manuf. Technol. Part A: 18, 369 (1995).CrossRefGoogle Scholar
34.Kasap, S.O.: Electronic Materials and Devices, 3rd ed. (McGraw-Hill, New York, USA, 2006).Google Scholar
35.Breteque, P.D.L.: Gallium. Ind. Eng. Chem. 56, 54 (1964).CrossRefGoogle Scholar
36.Neufeld, C.N. and Rieder, W.F.: Carbon contamination of contacts due to organic vapors. IEEE Trans. Compon. Packag. Manuf. Technol. Part A: 18, 399 (1995).CrossRefGoogle Scholar
37.Slade, P.G. and Taylor, E.D.: Electrical breakdown in atmospheric air between closely spaced (0.2 μm–40 μm) electrical contacts. IEEE Trans. Compon. Packag. Technol. 25, 75 (2002).CrossRefGoogle Scholar