Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-10T22:11:51.881Z Has data issue: false hasContentIssue false

Failure behavior upon shear test of 5Sn–95Pb solder bump after high temperature reliability test

Published online by Cambridge University Press:  03 March 2011

Yeh-Hsiu Liu
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
Chiang-Ming Chuang
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
Kwang-Lung Lin*
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
*
a)Address all correspondence to this author.e-mail: matkllin@mail.ncku.edu.tw
Get access

Abstract

The shear strength, intermetallic compound formation, and failure mechanism of high-lead solder (5Sn–95Pb) bump on flip chip under bump metallurgy, Al/Ni(V)/Cu, were investigated after thermal cycling, multiple reflow, and high-temperature aging. Two kinds of intermetallic compound, Cu3Sn and AlxNiy, were found at the interface. The Cu3Sn was formed between the solder and Ni(V) layer while AlxNiy was formed between Ni(V) and Al layer. The formation of the Cu3Sn compound will not affect the shear strength, 27–30 g, of the solder bump even after a high temperature long time aging test. However, the shear strength after the 30th reflow drops to less than 25 g, ascribed to the formation of a brittle compound, AlxNiy. The failure modes of the solder bump upon shear test were also discussed.

Type
Articles
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Berry, B.S. and Ames, I.: Studies of the SLT chip terminal metallurgy. IBM J. Res. Develop . 13, 286 (1969).CrossRefGoogle Scholar
2.Lau, J.H.: Flip Chip Technology (McGraw-Hill, New York, 1996), Chap. 3, p. 123.Google Scholar
3.Vianco, P.T., Erickson, K.L. and Hopkins, P.L.: Solid state intermetallic compound growth between copper and high temperature, Tin-rich solders–Part I: Experimental analysis. J. Electron. Mater . 23, 721 (1994).CrossRefGoogle Scholar
4.Tu, K.N.: Cu/Sn interfacial reactions: Thin-film case versus bulk case. Mater. Chem. Phys. 46, 217 (1996).CrossRefGoogle Scholar
5.Chen, Y.C., So, A.C.K. and Lai, J.K.L.: Growth kinetic studies of Cu–Sn intermetallic compound and its effect on shear strength of LCCC SMT solder joints. Mater. Sci. Eng. B 55, 5 (1998).CrossRefGoogle Scholar
6.Huang, W., Loman, J.M. and Sener, B.: Study of the effect of reflow time and temperature on Cu–Sn intermetallic compound layer reliability. Microelectronic Reliability 42, 1229 (2002).CrossRefGoogle Scholar
7.Pratt, R.E., Stromswold, E.I. and Quesnel, D.J.: Mode I fracture toughness testing of eutectic Sn-Pb solder joints. J. Electron. Mater. 23, 375 (1994).CrossRefGoogle Scholar
8.Dirnfeld, S.F., and Ramon, J.J.: Alternatives to conventional tin-lead solders tested. Weld. J. 68, 50 (1986).Google Scholar
9.Grivas, D., Frear, D., Quan, L., and Morris, J.W. Jr.: The formation of Cu3Sn intermetallic on the reaction of Cu with 95Pb-5Sn solder. J. Electron. Mater. 15, 355 (1986).CrossRefGoogle Scholar
10.Liu, C.Y., Tu, K.N., Sheng, T.T., Tung, C.H., Frear, D.R. and Elenius, P.: Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization. J. Appl. Phys. 87, 750 (2000).CrossRefGoogle Scholar
11.Davis, P.E., Warwick, M.E. and Kay, P.J.: Intermetallic compound growth and solderability. Plat. Surf. Finish 69, 72 (1982).Google Scholar
12.Massalski, T.B.: Binary Alloy Phase Diagrams (American Society for Metals, Metals Park, OH, 1986), p. 142.Google Scholar
13.Rothhaar, U., Oechsner, H., Scheib, M. and Müller, R.: Compositional and structural characterization of temperature-induced solid-state reactions in Al/Ni multilayers. Phys. Rev. B 61, 974 (2000).CrossRefGoogle Scholar
14.Chevrier, F., Delobbe, A., Traverse, A. and Zanghi, D.: Structural study of a thermally diffused Al/Ni bilayer via x-ray absorption spectroscopy and x-ray photoelectron spectroscopy. J. Appl. Phys. 90, 2718 (2001).CrossRefGoogle Scholar
15.Teo, P.S., Huang, Y.W., Tung, C.H., Marks, M.R., and Lim, T.B.: Investigation of under bump metallization systems for flip-chip assemblies. In Proceedings of the 2000 Electronic Components and Technology Conference, (IEEE,New York, 2000), p. 33.Google Scholar
16.Ross, Robert B: Metallic Materials Specification Handbook (Chapman & Hall, London, U.K., 1992), p. 202.CrossRefGoogle Scholar
17.Bartels, F., Morris, J.W. Jr.Dalke, G. and Gust, W.: Intermetallic phase formation in thin solid-liquid diffusion couples. J. Electron. Mater. 23, 787 (1994).CrossRefGoogle Scholar
18.Tu, K.N.: Interdiffusion and reaction in bimetallic Cu-Sn thin films. Acta Metall . 21, 347 (1973).CrossRefGoogle Scholar
19.Sunwoo, A.J., Morris, J.W. Jr. and Lucey, G.K. Jr.: The growth of Cu-Sn intermetallics at a pretinned copper-solder interface. Metall. Trans. A 23, 1323 (1992).CrossRefGoogle Scholar
20.Pearson, W.B., Handbook of Lattice Spacings and Structures of Metals and Alloys (Pergamon Press, London, U.K., 1958), pp. 125, 129.Google Scholar
21.Brooks, P.L. and Gillam, E.: The ε-phase in the Cu-Sn system. Acta Metall . 18, 1181 (1970).CrossRefGoogle Scholar
22.Gangulee, A., Das, G.C. and Bever, M.B.: An x-ray diffraction and calorimetric investigation of the compound Cu6Sn5. Metall. Trans. 4, 2063 (1973).CrossRefGoogle Scholar