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Field decrystallization and structural modifications of highly doped silicon in a 2.45-GHz microwave single-mode cavity

Published online by Cambridge University Press:  03 March 2011

Ramesh Peelamedu ,
Rustum Roy ,
Dinesh Agrawal  and
William Drawl
Ramesh Peelamedu*
Affiliation:
Materials Research Institute, The Pennsylvania State University,University Park, Pennsylvania 16802
Rustum Roy
Affiliation:
Materials Research Institute, The Pennsylvania State University,University Park, Pennsylvania 16802
Dinesh Agrawal
Affiliation:
Materials Research Institute, The Pennsylvania State University,University Park, Pennsylvania 16802
William Drawl
Affiliation:
Materials Research Institute, The Pennsylvania State University,University Park, Pennsylvania 16802
*
a) Address all correspondence to this author. e-mail: pdramesh@psu.edu
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Abstract

Highly doped n-type silicon powder responds aggressively to a 2.45-GHz microwave E-field, whereas it remains unperturbed in the H-field. In the E-field, after about 30 s of treatment, the silicon powder attained submelting temperatures and thus coagulated to a bulk solid piece. X-ray diffraction analysis of the surface and the cross section of this solid material failed to show any detectable peaks, ascertaining the fact that the material had decrystallized. The Raman spectra of the material had broad and shallow peaks quite different from the thin, sharp lines exhibited by Si wafer. It appears that the E-field treatment has considerably distorted the lattice structure creating lattice strains throughout the sample. These lattice strains were relieved by grinding (recrystallized).

Keywords

DecrystallizationRaman Spectroscopy
Type
Rapid Communications
Information
Journal of Materials Research , Volume 19 , Issue 6 , June 2004 , pp. 1599 - 1602
Copyright
Copyright © Materials Research Society 2004

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References

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