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The formation of intermetallics in Cu/In thin films

Published online by Cambridge University Press:  31 January 2011

Rita Roy ,
S.K. Sen  and
Suchitra Sen
Rita Roy
Affiliation:
Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Calcutta-700032, India
S.K. Sen
Affiliation:
Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Calcutta-700032, India
Suchitra Sen
Affiliation:
Central Glass and Ceramic Research Institute, Jadavpur, Calcutta-700032, India
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Abstract

The kinetics of the formation of intermetallics in the Cu–In bimetallic thin film couple have been studied from room temperature to 432 K by measuring the evolution of composite and contact electrical resistance with time and temperature. The resistivity measurements have been supplemented by x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Copper reacts with indium even at room temperature to form CuIn intermetallic and assuming a model of defect assisted diffusion into the grains, the activation energy averaged over five different samples is found to be 0.40 eV. The grain boundary diffusion is found to occur with an average activation energy of 0.55 eV. XRD confirms the growth of CuIn intermetallic and on annealing at higher temperature, for copper-rich films copper further reacts with CuIn to form Cu9In4. Further evidences of solid state reactions and grain boundary diffusion through Cu grain boundaries have been obtained from SEM study. TEM indicates the growth of the grain size on annealing and confirms the presence of the CuIn phase.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 6 , June 1992 , pp. 1377 - 1386
Copyright
Copyright © Materials Research Society 1992

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