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Formation of stable dopant interstitials during ion implantation of silicon

Published online by Cambridge University Press:  31 January 2011

S.J. Pennycook ,
R.J. Culbertson  and
J. Narayan
S.J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
R.J. Culbertson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
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Abstract

High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transientenhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for longrange self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism with no vacancy contribution. We propose that the complexes are simply interstitial dopant atoms (in a split <100> interstitialcy configuration) that are particularly stable in the case of group V dopants. As they decay self-interstitials are released and cause the transient-enhanced diffusion.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 3 , June 1986 , pp. 476 - 492
Copyright
Copyright © Materials Research Society 1986

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References

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