Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-10T07:49:44.751Z Has data issue: false hasContentIssue false
  • English
  • Français

Friction and wear of argon-implanted silicon crystals

Published online by Cambridge University Press:  03 March 2011

J. Lekki ,
Z. Stachura ,
N. Preikschas ,
B. Cleff ,
M. Cholewa  and
G.J.F. Legge
J. Lekki
Affiliation:
Institute of Nuclear Physics, Cracow, Poland
Z. Stachura
Affiliation:
Institute of Nuclear Physics, Cracow, Poland
N. Preikschas
Affiliation:
Institute of Nuclear Physics, Münster, Germany
B. Cleff
Affiliation:
Institute of Nuclear Physics, Münster, Germany
M. Cholewa
Affiliation:
Micro Analytical Research Centre, School of Physics, The University of Melbourne, Australia
G.J.F. Legge
Affiliation:
Micro Analytical Research Centre, School of Physics, The University of Melbourne, Australia
Get access

Abstract

Silicon 〈111〉 single crystals were implanted with 70 keV Ar ions to the dose of 1017 ions/cm2. Next, the friction coefficient between a Si crystal and a hard steel ball was measured using a pin-on-disk setup in air and in vacuum. The wear tracks were measured using a surface profilometer. For measurements performed in vacuum, a strong influence of implantation on friction force and wear tracks was found. The microstructure of the samples was subsequently investigated using RBS, ERD, and x-ray diffraction (XRD) techniques. Micro-RBS measurements showed that Ar had been removed from the wear tracks, despite their continued exhibition of low friction.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 1 , January 1994 , pp. 91 - 95
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Hartley, N. E. W., Dearnaley, G., and Turner, J. F., Proc. Int. Conf. on Ion Implantation in Semiconductors and Other Materials, Yorktown Heights (Plenum, New York, 1973), p. 423.CrossRefGoogle Scholar
2McHargue, C. J., Int. Metals Rev. 31 (2), 49 (1986).Google Scholar
3Iwaki, M., Mater. Sci. Eng. 90, 263 (1987).CrossRefGoogle Scholar
4Buckley, D. H., Ferrante, J., Pashley, M. D., and Smith, J. R., Mater. Sci. Eng. 83, 177–188 (1986).CrossRefGoogle Scholar
5Ziegler, J. F., BierSack, J. P., and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon Press, Oxford, 1985).Google Scholar
6Asheron, C. and Neumann, H., Nucl. Instrum. Methods B 18, 161–164 (1987).CrossRefGoogle Scholar
7Legge, G. J. F. and Hammond, I., J. Microsc. 177 (2), 201 (1979).CrossRefGoogle Scholar