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Gas flow effects on the structure and composition of SiNx/Si/SiNx films prepared by radio-frequency magnetron sputtering

Published online by Cambridge University Press:  31 January 2011

Wentao Xu ,
Boquan Li ,
Toshiyuki Fujimoto  and
Isao Kojima
Wentao Xu
Affiliation:
Department of Analytical Chemistry, National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
Boquan Li
Affiliation:
Department of Analytical Chemistry, National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
Toshiyuki Fujimoto
Affiliation:
Department of Analytical Chemistry, National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
Isao Kojima*
Affiliation:
Department of Analytical Chemistry, National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
*
a)Address all correspondence to this author. e-mail: kojima@nimc.go.jp
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Abstract

The structure and composition of SiNx/Si/SiNx films were investigated by means of x-ray reflectivity, x-ray photoelectron spectroscopy, and atomic force microscopy. The three-layer films were prepared by radio-frequency magnetron sputtering under the condition of constant nitrogen flow and the argon flow. It was found that the deposition rate and surface structure of the silicon nitride films were mainly determined by the nitrogen flow rather than the argon flow. But the composition of the silicon nitride films was controlled by the gas flow ratio (FAr/FN2) used during sputtering.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 1 , January 2001 , pp. 308 - 313
Copyright
Copyright © Materials Research Society 2001

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References

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