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Growth and characteristics of AlGaN/GaN heterostructures on sp2-bonded BN by metal–organic chemical vapor deposition

Published online by Cambridge University Press:  28 July 2016

Qing Paduano ,
Michael Snure ,
Gene Siegel ,
Darren Thomson  and
David Look
Qing Paduano*
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH 45433
Michael Snure
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH 45433
Gene Siegel
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH 45433; and Wyle Laboratories, Inc., 2601 Mission Point Blvd., Dayton, OH 45431
Darren Thomson
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH 45433
David Look
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH 45433; Wyle Laboratories, Inc., 2601 Mission Point Blvd., Dayton, OH 45431; and Semiconductor Research Center, Wright State University, Dayton, OH 45435
*
a) Address all correspondence to this author. e-mail: qing.paduano@us.af.mil
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Abstract

AlGaN/GaN heterostructures were grown by metal–organic chemical vapor deposition (MOCVD) on sp2-bonded BN using AlN as a nucleation layer. The best x-ray diffraction rocking curve full-width-at-half-maximums (FWHMs) are 0.13° and 0.17° for the GaN (0002) and ( $10\bar 12$ ) diffraction peaks. Hall-effect measurements show room temperature mobility near 2000 cm/V·s with sheet carrier density of ∼1 × 1013 cm−2, comparable to the best values obtained on sapphire using Fe-doped GaN buffers. The best low temperature mobility of the 2-dimensional electron gas (2DEG) is ∼33,000 cm2/V·s; indicating that the dominant scattering mechanism limiting the transport of 2DEG is interface roughness. Good quality BN grown directly onto sapphire is shown to be effective for reducing parallel conduction that exists due to residual donor impurities in the buffer. Luminescence measurements indicate good optical quality of the GaN/BN/sapphire. The residual strain in the GaN layer is found to be almost completely eliminated when it is released from the substrate.

Keywords

nitrideelectrical propertiescrystal growth
Type
Invited Papers
Information
Journal of Materials Research , Volume 31 , Issue 15 , 15 August 2016 , pp. 2204 - 2213
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Copyright
Copyright © Materials Research Society 2016 

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