Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-28T01:16:31.329Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of Series Nd:GdxLa1-xVO4 (x = 0.80, 0.60, 0.45) Crystals

Published online by Cambridge University Press:  31 January 2011

Huaijin Zhang ,
Changqing Wang ,
Li Zhu ,
Xuesong Liu ,
Guanghui Zhang ,
Wentao Yu ,
Xianlin Meng  and
Y. T. Chow
Huaijin Zhang*
Affiliation:
National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China
Changqing Wang
Affiliation:
National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China
Li Zhu
Affiliation:
National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China
Xuesong Liu
Affiliation:
National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China
Guanghui Zhang
Affiliation:
National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China
Wentao Yu
Affiliation:
National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China
Xianlin Meng
Affiliation:
National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China
Y. T. Chow
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
*
a)Address all correspondence to this author. e-mail: xlmeng@icm.sdu.edu.cn
Get access

Abstract

In this paper, series crystals Nd:Gd0.8La0.2VO4, Nd:Gd0.6La0.4VO4, and Nd:Gd0.45La0.55VO4 were grown by the Czochralski method. The structure and lattice constants of the series crystals were measured. The morphology of Nd:Gd0.8La0.2VO4 is discussed, and it is composed of {100} and {101} simple forms. The thermal expansion and specific heat of the Nd:Gd0.8La0.2VO4 crystal were also measured. The absorption and emission spectra of the Nd:Gd0.8La0.2VO4 and Nd:Gd0.6La0.4VO4 crystals were measured at room temperature. The laser outputs at 1.06 and 1.34 μm were determined when a crystal sample of Nd:Gd0.8La0.2VO4 was pumped by a laser diode at 808 nm, and the visible green and red laser outputs of the intracavity frequency double at 0.53 and 0.67 μm were determined when nonlinear KTiOPO4 and LiB3O5 crystals were used.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 3 , March 2002 , pp. 556 - 562
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

J.R. O’Connor, Appl. Phys. Lett. 9, 407 (1966).Google Scholar
Tucher, A.W., Birnbaun, M., Fincher, C.L., and Deshazer, L.G., J. Appl. Phys. 47, 232 (1976).CrossRefGoogle Scholar
Tucher, A.W., Birebaun, M., Fincher, C.L., and Erler, J.W., J. Appl. Phys. 48, 4907 (1977).CrossRefGoogle Scholar
Fielfs, R.A., Birnbaun, M., and Fincher, C.L., Appl. Phys. Lett. 51, 1885 (1987).Google Scholar
Izawa, T., Uchimura, R., Matsui, S., Arichi, T., and Yakouh, T., in Conference on Laser and Electro-Optics, Technical Digest Series (1998), paper CThA1, p. 322.Google Scholar
Nebel, U., Ruffing, B., and Wallenstein, R., in Conference on Laser and Electro-Optics (1998), postdeadline paper, CPD3−1.Google Scholar
Zagmennyi, A.I., Ostromov, V.G., Shcherbarkov, I.A., Jensen, T., Meyn, J-P., and Huber, G., Sov. J. Quantum Electron. 22, 1071 (1992).CrossRefGoogle Scholar
Jensen, T., Ostroumov, V.G., Meyn, J-P., Huber, G., Zagumennyi, A.I., and Shcherbakov, I.A., Appl. Phys. B 58, 373 (1994).CrossRefGoogle Scholar
Shimamura, K., Uda, S., Kochurikhin, V.V., Taniuchi, T., and Fukuda, T., Jpn. J. Appl. Phys. 35, 1832 (1996).CrossRefGoogle Scholar
Zhang, H.J., Meng, X.L., Zhu, L., Zhang, H.Z., Wang, P., Dawes, J., Wang, C.Q., and Chow, Y.T., Cryst. Res. Technol. 33, 801 (1998).3.0.CO;2-C>CrossRefGoogle Scholar
Wyss, Chr.P., Luthy, W., Weber, H.P., Vlasov, V.L., Zavrtsev, Yu.D., Studenokin, P.A., and Zagumennyi, A.I., Appl. Phys. B 68, 659 (1999).Google Scholar
Zhang, H., Meng, X., Zhu, L., Liu, J., Wang, C., and Shao, Z., Jpn. J. Appl. Phys. 38, L1231 (1999).CrossRefGoogle Scholar
Ostroumov, V.G., Huber, G., Zagumrnnyi, A.I., Yu. D. Zavartsev, Studenikin, P.A., and Shcherbakov, I.A., Opt. Commun. 124, 63 (1996).CrossRefGoogle Scholar
Studenikin, P.A., Zagumennyi, A.I., Zavartsev, Yu.D., Popov, P.A., and Shcherbakov, I.A., Quantum Electron. 25, 1162 (1995).CrossRefGoogle Scholar
Chai, B.H.T., Loutts, G., Lefaucheur, J., Zhang, X.X., Hong, P., Bass, M., Shcherbakov, I.A., and Zagumennyi, A.I., in OSA Proceedings on Advanced Solid-State Lasers, edited by Fan, T.Y. and Chai, B.H.T. (Optical Society of America, Washington, D.C., 1994), pp. 20, 41.Google Scholar
JCPDS Diffraction File No. 17–260, International Centre for Diffraction Data, Newton Square, PA.Google Scholar
Fan, T.Y. and Byer, R.L., IEEE J. Quantum Electron. 23, 605 (1987).Google Scholar
Risk, W.P., J. Opt. Soc. Am. B 5, 1412 (1988).CrossRefGoogle Scholar
Zarrabi, J.H., Gavrilovic, P., and Singh, S., Appl. Phys. Lett. 67, 2439 (1995).CrossRefGoogle Scholar
Zeller, P. and Peuser, P., Opt. Lett. 25, 34 (2000).CrossRefGoogle Scholar
Rice, C.E. and Robinson, W.R., Acta Crystallogr. B 32, 2232 (1976).CrossRefGoogle Scholar
Zhang, H., Meng, X., Zhu, L., Wang, C., Chow, Y.T., and Lu, M., Opt. Mater. 14, 25 (2000).CrossRefGoogle Scholar
Xiao, D. and Wang, M., Crystal Physics (Sichuan University Press, Chengdu, China, 1989), p. 3 (in Chinese).Google Scholar
Zhang, H.J., Zhu, L., Meng, X.L., Yang, Z.H., Wang, C.Q., Yu, W.T., Chow, Y.T., and Lu, M.K., Cryst. Res. Technol. 34, 1011 (1999).3.0.CO;2-M>CrossRefGoogle Scholar
Zhang, H.J., Meng, X.L., Zhu, L., and Yang, Z.H., Mater. Res. Bull. 34, 1589 (1999).CrossRefGoogle Scholar
Agnesi, A., Readi, G.C., and Gobbi, P.G., IEEE J. Quantum Electron. 34, 1297 (1999).Google Scholar
Zhang, H.L., He, J.L., Hou, W., Fang, X.J., Wu, L.A., Xu, Z.Y., Wang, J.M., Zhao, Z.Y., Wu, X., Wu, B.C., and Chen, C.T., Chin. Phys. Lett. 15, 807 (1998).CrossRefGoogle Scholar
Zhang, H., Meng, X., Liu, J., Zhu, L., Wang, C., Shao, Z., Wang, J., and Liu, Y., J. Cryst. Growth 216, 367 (2000).CrossRefGoogle Scholar